Silicon Oxycarbide Films Produced by Remote Microwave Hydrogen Plasma CVD using a Tetramethyldisiloxane Precursor: Growth Kinetics, Structure, Surface Morphology, and Properties†

Abstract

Amorphous hydrogenated silicon oxycarbide (a-SiCO:H) thin films are produced by remote microwave hydrogen plasma CVD using 1,1,3,3-tetramethyldisiloxane precursor. The effect of substrate temperature (T_S) on the chemical structure and some properties of resulting a-SiCO:H films is reported. The examination performed by infrared spectroscopy revealed that the increase in T_S involves the elimination of organic moieties from the film and its transformation from polymer-like to ceramic-like high-crosslink-density material. Due to their small surface roughness, high density, and good optical transparency, the a-SiCO:H films seem to be useful coatings for optical and electronic devices.