MOCVD Synthesis of Terbium Oxide Films and their Optical Properties†

Abstract

Terbium oxide films are deposited on silicon substrates by metal-organic (MO)CVD from a vapor of Tb(thd)₃ in argon. Terbium sesquioxide (C-form) is realized in this process. Annealing of the films in air at 800 °C, followed by cooling in air, leads to the formation of Tb₄O₇. The Ar ion-etching of the annealed films causes a reduction of Tb⁴⁺ to Tb³⁺. Optical E_g is estimated, photoluminescence spectra are investigated, and refractive indexes and dielectric constants are measured for terbium oxide films before and after annealing in air.