ITO-induced Columnar Polycrystalline Silicon Thin Films by CVD

Chemical Vapor Deposition Pub Date : 2015-03-12 DOI:10.1002/cvde.201407138

Jun Du, Xin Gu, Huaqiang Fu, Haizhi Guo, Jiao Liu, Qi Wu, Jianguo Zou

引用次数: 0

Abstract

CVD is used to prepare indium tin oxide (ITO)-induced polycrystalline silicon thin films with SiH₄ as the precursor. The growth of columnar polycrystalline silicon is shown. The sheet resistance (R_□) of ITO-induced Si thin films ranges from about 167.3 to 466.2 Ω/sq. Light absorption increases, as does the detected transmittance, by about 18.4% − 30.5% for wavelengths less than 500 − 700 nm.

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ito诱导柱状多晶硅薄膜的CVD研究

以SiH4为前驱体，采用气相沉积法制备氧化铟锡(ITO)诱导多晶硅薄膜。显示了柱状多晶硅的生长。ito诱导的Si薄膜的片电阻R□在167.3 ~ 466.2 Ω/sq之间。波长小于500 ~ 700 nm的光吸收增加了18.4% ~ 30.5%，透射率也增加了。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Chemical Vapor Deposition 工程技术-材料科学：膜

自引率

0.00%

发文量

审稿时长

>12 weeks

期刊介绍： Chemical Vapor Deposition (CVD) publishes Reviews, Short Communications, and Full Papers on all aspects of chemical vapor deposition and related technologies, along with other articles presenting opinion, news, conference information, and book reviews. All papers are peer-reviewed. The journal provides a unified forum for chemists, physicists, and engineers whose publications on chemical vapor deposition have in the past been spread over journals covering inorganic chemistry, materials chemistry, organometallics, applied physics and semiconductor technology, thin films, and ceramic processing.