AACVD of Molybdenum Sulfide and Oxide Thin Films From Molybdenum(V)-based Single-source Precursors**

Chemical Vapor Deposition Pub Date : 2015-01-07 DOI:10.1002/cvde.201407135

Nicky Savjani, Jack R. Brent, Paul O'Brien

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引用次数: 21

Abstract

The decomposition of Mo₂O₃(S₂CNEt₂) ₄ (1) and Mo₂O₃(S₂COEt)₄ (2) single-source precursors (SSPs) via aerosol-assisted (AA⁻) CVD onto glass substrates is reported. The films grown from 2 are achieved at a lower temperature than 1 (300 and 425 °C, respectively), potentially attributable to the Chugaev elimination mechanism. Raman spectroscopy (RS) and scanning electron microscopy (SEM) show the composition of the films to be variable; films that are grown from the AACVD reaction of 1 are found to be of pure MoS₂ nanoplates, whereas those grown from 2 consist of MoO₃ microparticles and MoO₂ noncrystalline films, together with various nanostructures of MoS₂, depending on deposition temperature. The decomposition processes of the SSPs are assessed to determine why these variations in thin films are seen.

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钼(V)基单源前驱体制备硫化钼和氧化钼薄膜的AACVD研究**

报道了Mo2O3(S2CNEt2) 4(1)和Mo2O3(S2COEt)4(2)单源前驱体(ssp)在玻璃基板上的气溶胶辅助(AA−)CVD分解。2在比1更低的温度下生长(分别为300°C和425°C)，可能归因于Chugaev消除机制。拉曼光谱(RS)和扫描电镜(SEM)分析表明，膜的组成是可变的;从AACVD反应1中生长的膜是纯MoS2纳米片，而从AACVD反应2中生长的膜是由MoO3微粒和MoO2非晶体膜组成的，以及不同沉积温度的MoS2纳米结构。对ssp的分解过程进行了评估，以确定为什么在薄膜中看到这些变化。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Chemical Vapor Deposition 工程技术-材料科学：膜

自引率

0.00%

发文量

审稿时长

>12 weeks

期刊介绍： Chemical Vapor Deposition (CVD) publishes Reviews, Short Communications, and Full Papers on all aspects of chemical vapor deposition and related technologies, along with other articles presenting opinion, news, conference information, and book reviews. All papers are peer-reviewed. The journal provides a unified forum for chemists, physicists, and engineers whose publications on chemical vapor deposition have in the past been spread over journals covering inorganic chemistry, materials chemistry, organometallics, applied physics and semiconductor technology, thin films, and ceramic processing.