Capping Ti-Doped GaZnO on InGaZnO Layer As the Composite-Channel Structure for Enhancing the Device Performances and Stability of Thin-Film Transistors

Q Engineering

Journal of Display Technology Pub Date : 2016-09-02 DOI:10.1109/JDT.2016.2605703

Wei-Sheng Liu;Ying-Fu Chen;Yu-Ming Wang

{"title":"Capping Ti-Doped GaZnO on InGaZnO Layer As the Composite-Channel Structure for Enhancing the Device Performances and Stability of Thin-Film Transistors","authors":"Wei-Sheng Liu;Ying-Fu Chen;Yu-Ming Wang","doi":"10.1109/JDT.2016.2605703","DOIUrl":null,"url":null,"abstract":"The device performances of an amorphous indium gallium zinc oxide transparent thin-film transistor (a-IGZO TFT) were improved by using a Ti-doped GaZnO (GTZO) as the channel capping layer in this study. The GTZO thin film exhibited a high carrier concentration of 1.5 × 10\n21\ncm\n-3\n and served as both a carrier supplement and passivation layer for reducing the absorption of oxygen and moisture as well as the back-channel charge trapping in the composite-channel TFT. An enhanced carrier mobility with high electron concentration in the composite GTZO/IGZO heterostructure was verified in the Hall measurement. The GTZO/IGZO composite-channel TFT was demonstrated to show an improved carrier mobility of 15.5 cm\n2\n/V-s, subthreshold swing of 0.35 V/decade, off current of 1.4 × 10\n-11\n A, threshold voltage of 1.4 V, and ON/OFF current ratio of 1.2 × 10\n7\n. Stable operation with unchanged device characteristics was observed following a bias-stress test. Thus, the fabricated GTZO/IGZO TFTs exhibited advantageous device performance and improved device operation stability.","PeriodicalId":15588,"journal":{"name":"Journal of Display Technology","volume":"12 12","pages":"1554-1559"},"PeriodicalIF":0.0000,"publicationDate":"2016-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1109/JDT.2016.2605703","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Display Technology","FirstCategoryId":"1085","ListUrlMain":"https://ieeexplore.ieee.org/document/7559808/","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q","JCRName":"Engineering","Score":null,"Total":0}

引用次数: 5

Abstract

The device performances of an amorphous indium gallium zinc oxide transparent thin-film transistor (a-IGZO TFT) were improved by using a Ti-doped GaZnO (GTZO) as the channel capping layer in this study. The GTZO thin film exhibited a high carrier concentration of 1.5 × 10 ²¹ cm ^-3 and served as both a carrier supplement and passivation layer for reducing the absorption of oxygen and moisture as well as the back-channel charge trapping in the composite-channel TFT. An enhanced carrier mobility with high electron concentration in the composite GTZO/IGZO heterostructure was verified in the Hall measurement. The GTZO/IGZO composite-channel TFT was demonstrated to show an improved carrier mobility of 15.5 cm ² /V-s, subthreshold swing of 0.35 V/decade, off current of 1.4 × 10 ^-11 A, threshold voltage of 1.4 V, and ON/OFF current ratio of 1.2 × 10 ⁷ . Stable operation with unchanged device characteristics was observed following a bias-stress test. Thus, the fabricated GTZO/IGZO TFTs exhibited advantageous device performance and improved device operation stability.

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在InGaZnO层上覆盖Ti掺杂的GaZnO作为复合沟道结构以提高薄膜晶体管的器件性能和稳定性

本研究采用Ti掺杂的GaZnO（GTZO）作为沟道覆盖层，改善了非晶铟镓锌氧化物透明薄膜晶体管（a-IGZO TFT）的器件性能。GTZO薄膜表现出1.5×1021cm-3的高载流子浓度，同时作为载流子补充和钝化层，减少了复合沟道TFT中对氧和水分的吸收以及背沟道电荷捕获。在霍尔测量中验证了复合GTZO/IGZO异质结构中具有高电子浓度的增强的载流子迁移率。GTZO/IGZO复合沟道TFT显示出15.5 cm2/V-s的载流子迁移率、0.35 V/decade的亚阈值摆幅、1.4×10-11A的关断电流、1.4 V的阈值电压和1.2×107的开/关电流比的改善。在偏压应力测试之后观察到器件特性不变的稳定操作。因此，所制造的GTZO/IGZO TFT表现出有利的器件性能和改进的器件操作稳定性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Journal of Display Technology 工程技术-工程：电子与电气

CiteScore

1.50

自引率

0.00%

发文量

审稿时长

2.8 months

期刊介绍： This publication covers the theory, material, design, fabrication, manufacturing and application of information displays and aspects of display technology that emphasize the progress in device engineering, design and simulation, materials, electronics, physics, and reliability aspects of displays and the application of displays. The Journal is sponsored by EDS, seven other IEEE societies (BT, CES, CPMT, IA, IM, PHO and SSC) and the Optical Society of America (OSA).