Gui-Fu Yang , Sung-Hwan Jang , SUNG-UK JANG , Tae-Hyun Lee , Da-Hye Kim , Jung-Ho Huh , Seok-Hyun Yoo
{"title":"Controlling the beam angle spread of carbon implantation for improvement of bin map defect in V-NAND flash memory","authors":"Gui-Fu Yang , Sung-Hwan Jang , SUNG-UK JANG , Tae-Hyun Lee , Da-Hye Kim , Jung-Ho Huh , Seok-Hyun Yoo","doi":"10.1016/j.memori.2023.100027","DOIUrl":null,"url":null,"abstract":"<div><p>As the shrinkage of devices accelerates and the vertical layers increase, beam angle spread of carbon ion implantation (C IIP) for the silicon selective epitaxial growth (Si-SEG) areas in V-NAND is one of the most critical parameters related with bin map defects. The roles of C IIP in Si-SEGs are that it can suppress channeling effect of boron IIP and diffusion limitation of boron dopants during subsequent annealing processes. In this study, beam angle spread was reduced by 36% and the center-to-edge beam angle skew of wafer was reduced to less than 1° by optimizing the specification of tracking magnet and the beam angle mean. After applying the improved process conditions and effective interlocks, the bin defective rate was controlled less than 0.5% successfully.</p></div>","PeriodicalId":100915,"journal":{"name":"Memories - Materials, Devices, Circuits and Systems","volume":"4 ","pages":"Article 100027"},"PeriodicalIF":0.0000,"publicationDate":"2023-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Memories - Materials, Devices, Circuits and Systems","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S277306462300004X","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
As the shrinkage of devices accelerates and the vertical layers increase, beam angle spread of carbon ion implantation (C IIP) for the silicon selective epitaxial growth (Si-SEG) areas in V-NAND is one of the most critical parameters related with bin map defects. The roles of C IIP in Si-SEGs are that it can suppress channeling effect of boron IIP and diffusion limitation of boron dopants during subsequent annealing processes. In this study, beam angle spread was reduced by 36% and the center-to-edge beam angle skew of wafer was reduced to less than 1° by optimizing the specification of tracking magnet and the beam angle mean. After applying the improved process conditions and effective interlocks, the bin defective rate was controlled less than 0.5% successfully.
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