2D compound structures with deep subwavelength period on silicon fabricated by double time delayed femtosecond laser beams

Abstract

In this work, two orthogonally polarized femtosecond laser beams are employed to irradiate a p-doped silicon wafer with an electrical resistivity of 0.008 Ω·cm. It is interesting to find that 2D compound structures composed of sub-wavelength periodic ripples and deep sub-wavelength nanodot array can be produced when proper laser fluence and time delay between the dual laser beams are used. The formation of the periodic ripples can be explained by the interference between the preceding incident laser and it induced surface plasmon polaritons (SPPs). The periodic nanodot array has a period down to ∼200 nm and the radius of the nanodot is ∼30 nm, most of which appear at the boundary between the ditch and ridge of the ripple. During the ripples’ formation, the residual melting silicon is most probably located at the boundary between the ditch and ridge of the ripple. Furthermore, the period of the nanodot array is roughly equal to the perimeter of the nanodot. Therefore, it is considered that the dot array may be generated due to the Rayleigh-Taylor instability of the melting silicon. It is also noted that these nanodots are all uniformly arranged along vertical lines, indicating that the subsequent incident laser may break the stochastic characteristic of the Rayleigh-Taylor instability and produce the 2D periodic dot array. The thermo-hydrodynamical process combined with the interference effect between SPPs and the incident laser can benefit the formation of complex surface structures with versatile functions.