Analysis of quantum confinement in nanosheet FETs by using a quantum drift diffusion model

IF 0.5 4区工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC

Electronics and Communications in Japan Pub Date : 2023-02-08 DOI:10.1002/ecj.12394

Masashi Matsuda, Akira Hiroki

引用次数: 0

Abstract

In this paper, we have analyzed quantum confinement effects in nanosheet MOSFETs by using a quantum drift-diffusion (QDD) model. The QDD model is a device simulator which allows to simulate quantum confinement effects in the inversion layer for advanced MOSFETs. The quantum confinement effects in nanosheets have been analyzed by comparing the simulation results by QDD and drift-diffusion (DD) model. The drain current ratio of DD to QDD is 250.1% at VG = 0.5 V and 180.1% at VG = 0 V. While the maximum electron density of DD exists at the interface between the insulator and the silicon sheet, that of QDD goes to near the center of the silicon sheet. The electron areal density ratio of DD to QDD is 118.3% in the direction of the 10 nm width of the silicon sheet and 176.9% in the direction of the 4 nm width.

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用量子漂移扩散模型分析纳米片FET中的量子约束

本文利用量子漂移扩散（QDD）模型分析了纳米片MOSFET中的量子约束效应。QDD模型是一种器件模拟器，它允许模拟高级MOSFET的反转层中的量子限制效应。通过比较量子点散射和漂移扩散（DD）模型的模拟结果，分析了纳米片中的量子约束效应。DD与QDD的漏极电流比在VG=0.5V时为250.1%，在VG=0 V时为180.1%。当DD的最大电子密度存在于绝缘体和硅片之间的界面时，QDD的最大电子浓度接近硅片的中心。DD与QDD的电子面密度比在硅片的10nm宽度方向上为118.3%，在4nm宽度方向为176.9%。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Electronics and Communications in Japan 工程技术-工程：电子与电气

CiteScore

0.60

自引率

0.00%

发文量

审稿时长

6-12 weeks

期刊介绍： Electronics and Communications in Japan (ECJ) publishes papers translated from the Transactions of the Institute of Electrical Engineers of Japan 12 times per year as an official journal of the Institute of Electrical Engineers of Japan (IEEJ). ECJ aims to provide world-class researches in highly diverse and sophisticated areas of Electrical and Electronic Engineering as well as in related disciplines with emphasis on electronic circuits, controls and communications. ECJ focuses on the following fields: - Electronic theory and circuits, - Control theory, - Communications, - Cryptography, - Biomedical fields, - Surveillance, - Robotics, - Sensors and actuators, - Micromachines, - Image analysis and signal analysis, - New materials. For works related to the science, technology, and applications of electric power, please refer to the sister journal Electrical Engineering in Japan (EEJ).