Molecular layer deposition of hybrid silphenylene-based dielectric film

IF 23.2 2区材料科学 Q1 MATERIALS SCIENCE, COMPOSITES

Advanced Composites and Hybrid Materials Pub Date : 2023-10-11 DOI:10.1007/s42114-023-00756-8

Xinzhi Li, Marko Vehkamäki, Mykhailo Chundak, Kenichiro Mizohata, Anton Vihervaara, Matti Putkonen, Markku Leskelä, Mikko Ritala

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Abstract

Molecular layer deposition (MLD) offers molecular level control in deposition of organic and hybrid thin films. This article describes a new type of inorganic–organic silicon-based MLD process where Aluminium chloride (AlCl₃) and 1,4-bis(triethoxysilyl)benzene (BTEB) were used as precursors. Hybrid films were deposited at a temperature range of 300 to 500 °C and high growth per cycle (GPC) up to 1.94 Å was obtained. Field emission scanning electron microscopy (FESEM) and atomic force microscopy (AFM) were used to analyze the appearance of the film surface. The hybrid film was amorphous in low-magnification FESEM images but some particulates appeared in high-magnification FESEM images (200 k). Attenuated total reflectance Fourier transform infrared spectroscopy (ATR-FTIR), Time-of-flight elastic recoil detection analysis (ToF-ERDA), and X-ray photoelectron spectroscopy (XPS) were employed to analyze the structure and composition of the hybrid film. The ratio of Al/Si in the hybrid film was 0.8. The storage environment of the films affected their capacitance, dielectric constant, leakage performance, and breakdown voltage. A film stored in a high vacuum (10^–6 mbar) environment had low leakage current density (< 10^–6 A × cm⁻² at an applied voltage of 28 V) and a dielectric constant of 4.94, which was much smaller than after storing in a humid ambient environment.

Graphical abstract

Abstract Image

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杂化硅苯基介电膜的分子层沉积

分子层沉积(MLD)为有机薄膜和杂化薄膜的沉积提供了分子水平的控制。本文介绍了一种以氯化铝(AlCl3)和1,4-双(三乙氧基硅基)苯(BTEB)为前驱体的新型无机-有机硅基MLD工艺。在300 ~ 500℃的温度范围内沉积杂化膜，获得了高达1.94 Å的高生长周期(GPC)。采用场发射扫描电镜(FESEM)和原子力显微镜(AFM)对膜表面形貌进行了分析。利用衰减全反射傅立叶变换红外光谱(ATR-FTIR)、飞行时间弹性反冲检测分析(ToF-ERDA)和x射线光电子能谱(XPS)分析了杂化膜的结构和组成。杂化膜中Al/Si的比值为0.8。薄膜的储存环境对薄膜的电容、介电常数、漏电性能和击穿电压都有影响。在高真空(10-6 mbar)环境下存储的薄膜具有较低的漏电流密度(外加电压为28 V时为10-6 A × cm−2)，介电常数为4.94，远小于在潮湿环境下存储的薄膜。图形抽象

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来源期刊

Advanced Composites and Hybrid Materials Multiple-

CiteScore

26.00

自引率

21.40%

发文量

185

期刊介绍： Advanced Composites and Hybrid Materials is a leading international journal that promotes interdisciplinary collaboration among materials scientists, engineers, chemists, biologists, and physicists working on composites, including nanocomposites. Our aim is to facilitate rapid scientific communication in this field. The journal publishes high-quality research on various aspects of composite materials, including materials design, surface and interface science/engineering, manufacturing, structure control, property design, device fabrication, and other applications. We also welcome simulation and modeling studies that are relevant to composites. Additionally, papers focusing on the relationship between fillers and the matrix are of particular interest. Our scope includes polymer, metal, and ceramic matrices, with a special emphasis on reviews and meta-analyses related to materials selection. We cover a wide range of topics, including transport properties, strategies for controlling interfaces and composition distribution, bottom-up assembly of nanocomposites, highly porous and high-density composites, electronic structure design, materials synergisms, and thermoelectric materials. Advanced Composites and Hybrid Materials follows a rigorous single-blind peer-review process to ensure the quality and integrity of the published work.