Preparation, properties, and electronic applications of 2D Bi2O2Se

Abstract

Two-dimensional (2D) materials offer novel platforms to meet the increasing demands of next-generation miniaturized electronics. Among them, the recently emerged 2D Bi₂O₂Se with unique non-van der Waals interlayer interaction, high mobility, sizeable bandgap, and capability to fabricate homologous heterojunction, is of particular interest. In this Review, we introduce recent progress in preparation, transfer, mechanical and electrical properties, and electronic applications of 2D Bi₂O₂Se. First, we summarize methodologies to synthesize and massively produce 2D Bi₂O₂Se, as well as recent advances in transferring them from growth substrate to arbitrary substrates. Then, we review current understandings on the intrinsic mechanical properties of Bi₂O₂Se at 2D thickness limit, and its in-plane and out-of-plane electrical properties. Electronic devices including field-effect transistors, memristors, and sensors based on 2D Bi₂O₂Se for neuromorphic computing, memory, logic, and integrated circuits are discussed. Finally, challenges and prospects for the development of 2D Bi₂O₂Se are proposed.