Application of Optical Emission Spectroscopy for Predicting the Composition of Films in Reactive Magnetron Sputtering of Ti–Al Composite Targets

IF 0.9 Q3 Engineering

Surface Engineering and Applied Electrochemistry Pub Date : 2023-10-17 DOI:10.3103/S106837552305006X

H. T. Doan, D. A. Golosov, J. Zhang, S. N. Melnikov, S. M. Zavadski

{"title":"Application of Optical Emission Spectroscopy for Predicting the Composition of Films in Reactive Magnetron Sputtering of Ti–Al Composite Targets","authors":"H. T. Doan, D. A. Golosov, J. Zhang, S. N. Melnikov, S. M. Zavadski","doi":"10.3103/S106837552305006X","DOIUrl":null,"url":null,"abstract":"<div><div><h3>\n Abstract—</h3>The processes of reactive magnetron sputtering of Ti–Al composite targets with varying Al/Ti ratios were studied. Dependences of deposition rate, discharge voltage, elemental composition, and intensity of reference plasma emission lines were determined as functions of the oxygen concentration in the Ar–O2 gas mixture. It was demonstrated that, in reactive sputtering of Ti–Al composite targets, the discharge voltage is determined by the effective ion–electron emission coefficient (IEEC), which depends on the area occupied by the metals on the target, their oxidation states, and the IEEC of the metals and their oxides. The deposition rate of TixAl1 – xOy films both in the metallic and transitional sputtering modes increases proportionally to the fraction of Al in the target, and the relative concentration of the metals in the deposited films depends on the oxygen concentration in the Ar–O2 gas mixture and is determined by the reactivity of the constituent materials in the target. By optical emission spectroscopy (OES), it was shown that the ratio of the atomic concentrations of Al and Ti in the deposited TixAl1 – xOy films uniquely depends on the ratio of the intensities of the aluminum emission line (AlI) and the titanium emission line (TiI) in the plasma. This allows using OES for predicting the metal contents in the films in reactive magnetron sputtering of Ti–Al targets.</div></div>","PeriodicalId":782,"journal":{"name":"Surface Engineering and Applied Electrochemistry","volume":"59 5","pages":"682 - 689"},"PeriodicalIF":0.9000,"publicationDate":"2023-10-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Surface Engineering and Applied Electrochemistry","FirstCategoryId":"1085","ListUrlMain":"https://link.springer.com/article/10.3103/S106837552305006X","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"Engineering","Score":null,"Total":0}

引用次数: 0

Abstract—

The processes of reactive magnetron sputtering of Ti–Al composite targets with varying Al/Ti ratios were studied. Dependences of deposition rate, discharge voltage, elemental composition, and intensity of reference plasma emission lines were determined as functions of the oxygen concentration in the Ar–O₂ gas mixture. It was demonstrated that, in reactive sputtering of Ti–Al composite targets, the discharge voltage is determined by the effective ion–electron emission coefficient (IEEC), which depends on the area occupied by the metals on the target, their oxidation states, and the IEEC of the metals and their oxides. The deposition rate of Ti_xAl_{1 – x}O_y films both in the metallic and transitional sputtering modes increases proportionally to the fraction of Al in the target, and the relative concentration of the metals in the deposited films depends on the oxygen concentration in the Ar–O₂ gas mixture and is determined by the reactivity of the constituent materials in the target. By optical emission spectroscopy (OES), it was shown that the ratio of the atomic concentrations of Al and Ti in the deposited Ti_xAl_{1 – x}O_y films uniquely depends on the ratio of the intensities of the aluminum emission line (AlI) and the titanium emission line (TiI) in the plasma. This allows using OES for predicting the metal contents in the films in reactive magnetron sputtering of Ti–Al targets.

Abstract Image

查看原文本刊更多论文

光发射光谱法在Ti–Al复合靶材反应磁控溅射薄膜成分预测中的应用

摘要——研究了不同Al/Ti比的Ti–Al复合靶材的反应磁控溅射工艺。沉积速率、放电电压、元素组成和参考等离子体发射线强度的依赖性被确定为Ar–O2气体混合物中氧浓度的函数。研究表明，在Ti–Al复合靶材的反应溅射中，放电电压由有效离子-电子发射系数（IEEC）决定，该系数取决于金属在靶材上占据的面积、金属的氧化态以及金属及其氧化物的IEEC。TixAl1–xOy薄膜在金属和过渡溅射模式下的沉积速率与靶材中Al的比例成比例增加，沉积薄膜中金属的相对浓度取决于Ar–O2气体混合物中的氧浓度，并由靶材中组成材料的反应性决定。通过光学发射光谱（OES）研究表明，沉积的TixAl1–xOy薄膜中Al和Ti的原子浓度之比独特地取决于等离子体中铝发射线（AlI）和钛发射线（TiI）强度之比。这允许在Ti–Al靶的反应磁控溅射中使用OES来预测膜中的金属含量。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

Surface Engineering and Applied Electrochemistry Engineering-Industrial and Manufacturing Engineering

CiteScore

1.60

自引率

22.20%

发文量

期刊介绍： Surface Engineering and Applied Electrochemistry is a journal that publishes original and review articles on theory and applications of electroerosion and electrochemical methods for the treatment of materials; physical and chemical methods for the preparation of macro-, micro-, and nanomaterials and their properties; electrical processes in engineering, chemistry, and methods for the processing of biological products and food; and application electromagnetic fields in biological systems.