Photocatalytic degradation of rhodamine B by Bi2O3/Cs3PW12O40 composite under visible-light irradiation and its enhanced photocatalytic activity

IF 2.8 4区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Journal of Materials Science: Materials in Electronics Pub Date : 2022-08-25 DOI:10.1007/s10854-022-08932-0

Jiaxuan Wang, Daoxin Wu, Jialun Wu, Mengtian Duan, Haixia Tong

{"title":"Photocatalytic degradation of rhodamine B by Bi2O3/Cs3PW12O40 composite under visible-light irradiation and its enhanced photocatalytic activity","authors":"Jiaxuan Wang, Daoxin Wu, Jialun Wu, Mengtian Duan, Haixia Tong","doi":"10.1007/s10854-022-08932-0","DOIUrl":null,"url":null,"abstract":"<div>A novel Bi2O3/Cs3PW12O40 (Bi2O3/CsPW) composite was prepared by depositing Bi2O3 on the surface of spherical Cs3PW12O40. The synthesized photocatalyst was characterized using XRD, XPS, FT-IR, BET, SEM, TEM, and UV–Vis. The results revealed that the composite was a typical Keggin-type photocatalyst. Compared with pure Bi2O3 and CsPW, the composite exhibited high photocatalytic degradation activity for rhodamine B (RhB). The 10% Bi2O3/CsPW nanocomposite could decompose 92.7% of RhB under visible-light irradiation for 240 min. The improved photocatalytic degradation efficiency is mainly due to the enhanced absorption of visible-light and effective separation of photo-induced carriers caused by heterojunction formation. The active species capture tests confirmed that RhB photodegradation using Bi2O3/CsPW composite was mainly controlled by h+ and·O2− oxidation reactions. Furthermore, Bi2O3/CsPW composite displayed good stability under cyclic experiments.</div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"33 27","pages":"21396 - 21408"},"PeriodicalIF":2.8000,"publicationDate":"2022-08-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-022-08932-0","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

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Abstract

A novel Bi₂O₃/Cs₃PW₁₂O₄₀ (Bi₂O₃/CsPW) composite was prepared by depositing Bi₂O₃ on the surface of spherical Cs₃PW₁₂O₄₀. The synthesized photocatalyst was characterized using XRD, XPS, FT-IR, BET, SEM, TEM, and UV–Vis. The results revealed that the composite was a typical Keggin-type photocatalyst. Compared with pure Bi₂O₃ and CsPW, the composite exhibited high photocatalytic degradation activity for rhodamine B (RhB). The 10% Bi₂O₃/CsPW nanocomposite could decompose 92.7% of RhB under visible-light irradiation for 240 min. The improved photocatalytic degradation efficiency is mainly due to the enhanced absorption of visible-light and effective separation of photo-induced carriers caused by heterojunction formation. The active species capture tests confirmed that RhB photodegradation using Bi₂O₃/CsPW composite was mainly controlled by h⁺ and·O²⁻ oxidation reactions. Furthermore, Bi₂O₃/CsPW composite displayed good stability under cyclic experiments.

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Bi2O3/Cs3PW12O40复合材料在可见光下光催化降解罗丹明B及其增强的光催化活性

通过在球形Cs3PW12O40表面沉积Bi2O3，制备了一种新型Bi2O3/Cs3PW12O40 (Bi2O3/CsPW)复合材料。采用XRD、XPS、FT-IR、BET、SEM、TEM和UV-Vis对合成的光催化剂进行了表征。结果表明，该复合材料为典型的keggin型光催化剂。与纯Bi2O3和CsPW相比，该复合材料对罗丹明B (rhodamine B, RhB)具有较高的光催化降解活性。10% Bi2O3/CsPW纳米复合材料在可见光照射240 min下可降解92.7%的RhB。光催化降解效率的提高主要是由于增强了对可见光的吸收和光致载流子的有效分离引起的异质结形成。活性物质捕获试验证实，Bi2O3/CsPW复合材料对RhB的光降解主要受h+和·O2−氧化反应控制。此外，Bi2O3/CsPW复合材料在循环实验中表现出良好的稳定性。

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来源期刊

Journal of Materials Science: Materials in Electronics 工程技术-材料科学：综合

CiteScore

5.00

自引率

7.10%

发文量

1931

审稿时长

2 months

期刊介绍： The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.