Grooved-gate silicon-on-nothing (SON) MOSFET: evidence for suppressing SCEs

IF 0.3 Q4 MATERIALS SCIENCE, MULTIDISCIPLINARY

Nanomaterials and Energy Pub Date : 2019-12-17 DOI:10.1680/jnaen.19.00023

Sikha Mishra, S. Mohanty, S. Bhol, G. P. Mishra

引用次数: 0

Abstract

This paper presents a simulation-based systematic characterization of a dual-metal-stack grooved-step-gate (DMS-GSG) silicon-on-nothing (SON) metal–oxide–semiconductor field-effect transistor (MOSF...

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沟槽栅无硅(SON) MOSFET:抑制sce的证据

本文介绍了一种基于模拟的双金属叠层沟槽步进栅极（DMS-GSG）无衬底硅（SON）金属-氧化物-半导体场效应晶体管（MOSF。。。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Nanomaterials and Energy MATERIALS SCIENCE, MULTIDISCIPLINARY-

CiteScore

2.10

自引率

0.00%

发文量