Investigation of Defect-Driven Memristive and Artificial Synaptic Behaviour at Nanoscale for Potential Application in Neuromorphic Computing

IF 0.8 4区 综合性期刊 Q3 MULTIDISCIPLINARY SCIENCES
Rupam Mandal, Dilruba Hasina, Aparajita Mandal, Tapobrata Som
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Abstract

The need for nano-sized memristive devices as synaptic emulators is increasing day-by-day to build neuromorphic devices on a chip with a large integration density. Therefore, nanoscale fabrication and subsequent device assessment are exigent to make further advancements in the field. In this report, by employing atomic force microscopy, we demonstrate highly dense electronic nano-synapses in filamentary metal oxide-based memristors, wherein the tip works as one of the electrodes. Different metal oxide-based memristors with varying defect concentrations have been studied to demonstrate the efficacy of atomic force microscopy-based local probe techniques in extracting the defect-dependent performance metrics of the same at nanoscale. Some of the basic biological synaptic characteristics such as potentiation/depression and spike’s property-dependent plasticities are accessed through different pulsed measurements in conductive atomic force microscopy mode. The current maps acquired using conductive atomic force microscopy measurements on the films confirm the filamentary resistive switching behaviour to prevail and point towards a possible decrease in the operating voltage with an increase in defects density. Kelvin probe force microscopic analyses, on the other hand, suggest that to improve the switching stability, resistivity of the active medium needs to be optimized. Overall, our results substantiate the efficacy of local probe microscopy-based methods to optimize the performance of memristive synapses at nanoscale for potential application in neuromorphic computing.

Abstract Image

纳米尺度缺陷驱动忆阻和人工突触行为在神经形态计算中的潜在应用研究
为了在具有大集成密度的芯片上构建神经形态器件,对纳米记忆器件作为突触仿真器的需求日益增加。因此,纳米级制造和随后的器件评估迫切需要在该领域取得进一步进展。在本报告中,通过原子力显微镜,我们展示了丝状金属氧化物基忆阻器中的高密度电子纳米突触,其中尖端作为电极之一。研究了具有不同缺陷浓度的不同金属氧化物基忆阻器,以证明基于原子力显微镜的局部探针技术在纳米尺度上提取缺陷相关性能指标的有效性。在导电原子力显微镜模式下,通过不同的脉冲测量获得了一些基本的生物突触特征,如增强/抑制和脉冲特性依赖的可塑性。利用导电原子力显微镜在薄膜上测量获得的电流图证实了丝状电阻开关行为是普遍存在的,并指出随着缺陷密度的增加,工作电压可能会降低。另一方面,开尔文探针力微观分析表明,为了提高开关稳定性,需要优化活性介质的电阻率。总的来说,我们的研究结果证实了基于局部探针显微镜的方法在纳米尺度上优化记忆突触性能的有效性,这在神经形态计算中具有潜在的应用前景。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
CiteScore
2.60
自引率
0.00%
发文量
37
审稿时长
>12 weeks
期刊介绍: To promote research in all the branches of Science & Technology; and disseminate the knowledge and advancements in Science & Technology
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