On the Investigation of Frequency-Related Fingerprints of Meminductor/Capacitor and Their Duals Realized by Circuit Emulators

IF 0.5 4区工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC

Radioengineering Pub Date : 2022-09-01 DOI:10.13164/re.2022.0374

K. Bhardwaj, M. Srivastava

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引用次数: 1

Abstract

. This article investigates the frequency-related fingerprints of the meminductor/capacitors and their duals realized by the circuit emulators. The direct dependency of the hysteresis loop area on the inverse of operating frequency is an important property of the memristor confirm-ing its resistive memory nature. This work shows that not all such elements (which exhibit hysteresis characteristics) seem to follow this fingerprint on subjected to the sinusoidal current/voltage excitation signal when they are realized by the emulator circuits. It is found that in some cases PHL (Pinched Hysteresis Loop) characteristics of the mem-capacitor/inductor and their elements, may seem to create a fallacy in their appearance. Although this behavior is natural (but distinct from the memristor), it does produce some challenges during the measurements of these memelements and non-memelements. The behavior has been demonstrated in the MATLAB generated plots and also verified in the experimental and simulation results obtained for the designed emulators for the memcapaci-tor/meminductor and their duals. The paper also attempts to propose potential solutions to avoid this delusion per-ceived in the PHL characteristics of memcapacitor/memin-ductor and their duals, due to conventional measuring methods.

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用电路仿真器实现电感/电容及其对偶的频率相关指纹的研究

本文研究了由电路仿真器实现的忆电感器/电容器及其对偶的频率相关指纹。磁滞回线面积与工作频率倒数的直接相关性是忆阻器的一个重要特性，证实了其电阻记忆特性。这项工作表明，当模拟器电路实现这些元件时，并非所有这些元件（表现出磁滞特性）在受到正弦电流/电压激励信号时似乎都遵循这一指纹。研究发现，在某些情况下，mem电容器/电感器及其元件的PHL（Pinched Hysteresis Loop）特性可能会在其外观上产生谬误。尽管这种行为是自然的（但与忆阻器不同），但在测量这些模元素和非模元素时，它确实会产生一些挑战。该行为已在MATLAB生成的图中进行了演示，并在为忆电容器/忆电感器及其对偶设计的仿真器获得的实验和仿真结果中进行了验证。本文还试图提出潜在的解决方案，以避免由于传统的测量方法而在记忆电容器/记忆管及其对偶的PHL特性中产生的这种错觉。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Radioengineering 工程技术-工程：电子与电气

CiteScore

2.00

自引率

9.10%

发文量

审稿时长

5.7 months

期刊介绍： Since 1992, the Radioengineering Journal has been publishing original scientific and engineering papers from the area of wireless communication and application of wireless technologies. The submitted papers are expected to deal with electromagnetics (antennas, propagation, microwaves), signals, circuits, optics and related fields. Each issue of the Radioengineering Journal is started by a feature article. Feature articles are organized by members of the Editorial Board to present the latest development in the selected areas of radio engineering. The Radioengineering Journal makes a maximum effort to publish submitted papers as quickly as possible. The first round of reviews should be completed within two months. Then, authors are expected to improve their manuscript within one month. If substantial changes are recommended and further reviews are requested by the reviewers, the publication time is prolonged.