Influence of γ-quanta on TlInSe2 crystal electrical properties

IF 1.2 4区材料科学 Q4 MATERIALS SCIENCE, MULTIDISCIPLINARY

Chalcogenide Letters Pub Date : 2022-12-21 DOI:10.15251/cl.2022.1912.885

M. Jafarov, N. Verdiyeva

引用次数: 0

Abstract

The influence of γ-quanta on the current flow in TlInSe2 single crystals and the process of filling and emptying localized levels in crystals has been experimentally studied. Investigations show that the current -voltage characteristics (CVC) of TlInSe2 single crystals obey Lampert theory and are determined by currents limited by the space charge. It is shown that the defects occurring from γ-quanta in TlInSe2 single crystals result from radiation processes

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γ-量子对TlInSe2晶体电学性质的影响

实验研究了γ-量子对TlInSe2单晶中电流的影响以及晶体中局域能级的填充和清空过程。研究表明，TlInSe2单晶的电流-电压特性服从Lampert理论，是由空间电荷限制的电流决定的。结果表明，TlInSe2单晶中γ-量子缺陷的产生是辐射过程的结果

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Chalcogenide Letters MATERIALS SCIENCE, MULTIDISCIPLINARY-PHYSICS, APPLIED

CiteScore

1.80

自引率

20.00%

发文量

审稿时长

1 months

期刊介绍： Chalcogenide Letters (CHL) has the aim to publish rapidly papers in chalcogenide field of research and appears with twelve issues per year. The journal is open to letters, short communications and breakings news inserted as Short Notes, in the field of chalcogenide materials either amorphous or crystalline. Short papers in structure, properties and applications, as well as those covering special properties in nano-structured chalcogenides are admitted.