Magnetic Random-Access Memory-Based Approximate Computting: An overview

IF 2.3 Q3 NANOSCIENCE & NANOTECHNOLOGY

IEEE Nanotechnology Magazine Pub Date : 2022-02-01 DOI:10.1109/mnano.2021.3126093

You Wang, Kaili Zhang, Bo Wu, Deming Zhang, Hao Cai, Weisheng Zhao

引用次数: 1

Abstract

This article presents an overview of the recent developments in the magnetic random access memory (MRAM) for approximate computing. The key technique of approximate computing is to trade off limited accuracy for improvements in other metrics, such as speed, power, and area. With intrinsic current-induced threshold operation and random process variation, MRAM is regarded as a promising candidate for approximate computing. Beginning with the background of approximate computing, this article reviews prior design techniques at the circuit level and recent development trends. Then the physical mechanisms of randomness in MRAM are detailed. Several designs based on MRAM are comprehensively studied and compared in terms of performance. Finally, an outline of possible challenges and future research directions are given.

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基于磁随机存取存储器的近似计算:综述

本文概述了用于近似计算的磁随机存取存储器(MRAM)的最新发展。近似计算的关键技术是牺牲有限的精度来提高其他指标，如速度、功率和面积。由于固有的电流感应阈值运算和随机过程变化，MRAM被认为是一种很有前途的近似计算方法。本文从近似计算的背景出发，回顾了电路级的现有设计技术和最近的发展趋势。然后详细介绍了MRAM中随机性的物理机制。对几种基于MRAM的设计进行了全面的研究和性能比较。最后概述了可能面临的挑战和未来的研究方向。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Nanotechnology Magazine NANOSCIENCE & NANOTECHNOLOGY-

CiteScore

2.90

自引率

6.20%

发文量

期刊介绍： IEEE Nanotechnology Magazine publishes peer-reviewed articles that present emerging trends and practices in industrial electronics product research and development, key insights, and tutorial surveys in the field of interest to the member societies of the IEEE Nanotechnology Council. IEEE Nanotechnology Magazine will be limited to the scope of the Nanotechnology Council, which supports the theory, design, and development of nanotechnology and its scientific, engineering, and industrial applications.