Effect of Manganese Atoms on the Magnetic Properties of Silicon

IF 0.9 Q3 Engineering

Surface Engineering and Applied Electrochemistry Pub Date : 2023-05-20 DOI:10.3103/S106837552302014X

O. E. Sattarov, A. Mavlyanov, A. An

引用次数: 0

Abstract

It has been shown that the state of manganese atoms in the silicon lattice can be controlled with a view to varying the state and pattern of the magnetoresistance of the material. The laws governing changes in the magnetoresistance of silicon with manganese atoms (single atoms and clusters) as a function of temperature, illumination, and electric field have been determined.

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锰原子对硅磁性能的影响

研究表明，硅晶格中锰原子的状态可以通过改变材料的磁阻状态和模式来控制。硅锰原子(单原子和团簇)的磁电阻随温度、光照和电场的变化规律已经确定。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Surface Engineering and Applied Electrochemistry Engineering-Industrial and Manufacturing Engineering

CiteScore

1.60

自引率

22.20%

发文量

期刊介绍： Surface Engineering and Applied Electrochemistry is a journal that publishes original and review articles on theory and applications of electroerosion and electrochemical methods for the treatment of materials; physical and chemical methods for the preparation of macro-, micro-, and nanomaterials and their properties; electrical processes in engineering, chemistry, and methods for the processing of biological products and food; and application electromagnetic fields in biological systems.