HAXPES reference spectra of Si, SiO2, SiN, SiC, and poly(dimethyl siloxane) with Cr Kα excitation

Abstract

Monochromatic Cr Kα radiation (5414.8 eV) has been used to acquire XPS and Auger data on silicon, silicon dioxide, silicon nitride, silicon carbide, and poly(dimethyl siloxane) samples. Survey data, high-resolution scans of all observed photoelectron peaks, and high-resolution scans of Auger lines are presented herein.