Normally-off AlGaN/AlN/GaN HEMT with a composite recessed gate

IF 3.3 3区 物理与天体物理 Q2 PHYSICS, CONDENSED MATTER
Jialin Li , Yian Yin , Ni Zeng , Fengbo Liao , Mengxiao Lian , Xichen Zhang , Keming Zhang , Jingbo Li
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引用次数: 5

Abstract

As we all know, the normally-off HEMT is very important to the safety of power electronic systems. To increase the threshold voltage of the device, this article proposes to cover Al2O3 on the recessed P-GaN to form the recessed p-GaN HEMT covered with Al2O3. Through simulation calculation, covering Al2O3 on P-GaN can effectively increase the threshold voltage, but the saturation current and transconductance will be severely reduced. Therefore, this article optimizes the structure and proposes a composite recessed-gate HEMT for the first time. It can obtain high saturation current and high transconductance while maintaining a high threshold voltage. Compared with the recessed p-GaN HEMT covered with Al2O3, the transconductance and saturation current of the composite recessed-gate HEMT are increased by 13.14% and 121.33%, respectively, while the threshold voltage is only reduced by 4.44% (4.3 V). In addition, the gate dielectric has a greater impact on device performance. Therefore, this paper analyzes the influence of the thickness of the Al2O3 layer on the device through theoretical calculations and obtains the optimal value of the thickness. (T1 = 18.3 nm, Vth = 4.5 V, Isat = 456 mA/mm). The results show that the composite recessed gate has broad application prospects in the next generation of normally-off power device applications.

常关AlGaN/AlN/GaN HEMT与复合凹槽栅极
众所周知,正常关闭的HEMT对电力电子系统的安全至关重要。为了提高器件的阈值电压,本文提出在凹槽P-GaN上覆盖Al2O3,形成覆盖Al2O3的凹槽P-GaN HEMT。通过仿真计算,在P-GaN表面覆盖Al2O3可以有效提高阈值电压,但会严重降低饱和电流和跨导。因此,本文对结构进行了优化,首次提出了一种复合凹栅HEMT。它可以在保持高阈值电压的同时获得高饱和电流和高跨导。与覆盖Al2O3的凹槽p-GaN HEMT相比,复合凹槽栅HEMT的跨导和饱和电流分别提高了13.14%和121.33%,而阈值电压仅降低了4.44% (4.3 V)。此外,栅极介质对器件性能的影响更大。因此,本文通过理论计算分析了Al2O3层厚度对器件的影响,得到了厚度的最优值。(T1 = 18.3 nm, Vth = 4.5 V, Isat = 456 mA/mm)。结果表明,复合凹槽栅极在下一代常关电源器件应用中具有广阔的应用前景。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
Superlattices and Microstructures
Superlattices and Microstructures 物理-物理:凝聚态物理
CiteScore
6.10
自引率
3.20%
发文量
35
审稿时长
2.8 months
期刊介绍: Micro and Nanostructures is a journal disseminating the science and technology of micro-structures and nano-structures in materials and their devices, including individual and collective use of semiconductors, metals and insulators for the exploitation of their unique properties. The journal hosts papers dealing with fundamental and applied experimental research as well as theoretical studies. Fields of interest, including emerging ones, cover: • Novel micro and nanostructures • Nanomaterials (nanowires, nanodots, 2D materials ) and devices • Synthetic heterostructures • Plasmonics • Micro and nano-defects in materials (semiconductor, metal and insulators) • Surfaces and interfaces of thin films In addition to Research Papers, the journal aims at publishing Topical Reviews providing insights into rapidly evolving or more mature fields. Written by leading researchers in their respective fields, those articles are commissioned by the Editorial Board. Formerly known as Superlattices and Microstructures, with a 2021 IF of 3.22 and 2021 CiteScore of 5.4
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