Less-Conventional Low-Consumption Galvanic Separated MOSFET-IGBT Gate Drive Supply

IF 1.3 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Active and Passive Electronic Components Pub Date : 2017-05-24 DOI:10.1155/2017/4181549

Jean Marie V. Bikorimana, A. V. Bossche

引用次数: 0

Abstract

A simple half-bridge, galvanic separated power supply which can be short circuit proof is proposed for gate driver local supplies. The supply is made while hacking a common mode type filter as a transformer, as the transformer shows a good insulation, it has a very low parasitic capacitance between primary and secondary coils, and it is cost-effective. Very low standby losses were observed during lab experiments. This makes it compatible with energy efficient drives and solar inverters.

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不太常见的低功耗电流分离MOSFET-IGBT栅极驱动电源

提出了一种简单的半桥式电流分离电源，用于栅极驱动器本地电源，该电源可以防止短路。该电源是在将共模滤波器作为变压器的同时制造的，因为变压器显示出良好的绝缘性，初级线圈和次级线圈之间的寄生电容非常低，并且具有成本效益。在实验室实验期间观察到非常低的待机损耗。这使得它与节能驱动器和太阳能逆变器兼容。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Active and Passive Electronic Components ENGINEERING, ELECTRICAL & ELECTRONIC-

CiteScore

1.30

自引率

0.00%

发文量

审稿时长

13 weeks

期刊介绍： Active and Passive Electronic Components is an international journal devoted to the science and technology of all types of electronic components. The journal publishes experimental and theoretical papers on topics such as transistors, hybrid circuits, integrated circuits, MicroElectroMechanical Systems (MEMS), sensors, high frequency devices and circuits, power devices and circuits, non-volatile memory technologies such as ferroelectric and phase transition memories, and nano electronics devices and circuits.