High-Performance Acoustic Wave Devices on LiTaO3/SiC Hetero-Substrates

IF 5.2 1区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Microwave Theory and Techniques Pub Date : 2023-03-01 DOI:10.1109/TMTT.2023.3267556

Liping Zhang;Shibin Zhang;Jinbo Wu;Pengcheng Zheng;Hongyan Zhou;Hulin Yao;Zhongxu Li;Kai Huang;Huarui Sun;Xin Ou

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引用次数: 6

Abstract

We present high-performance shear horizontal surface acoustic wave (SH-SAW) and longitudinal leaky SAW (LL-SAW) devices using lithium tantalate (LiTaO3) thin films on silicon carbide (SiC) substrate. The 4-in LiTaO3-on-SiC (LTOSiC) hetero-substrate was prepared by an ion-slicing process. Instead of the Si-based piezo-on-insulator substrates, generally embedded with functional dielectric layers (e.g., SiO2), LTOSiC with a simple structure has achieved exciting results on device frequency, quality factor (

$Q$

), temperature coefficient of frequency (TCF), and thermal transport properties. The demonstrated resonators show the scalable resonances of 1.19–4.91 GHz, in which the gigahertz SH-SAW resonator exhibits an ultrahigh Bode-

$Q$

of 8100 and an excellent TCF of −4.3 ppm/K, while the LL-SAW resonator presents a high Bode-

$Q$

of 1000 and an improved TCF of −25.4 ppm/K at 5.0 GHz. Besides, the demonstrated filters show the center frequencies (

$f_{c}$

) of 2.74–4.26 GHz, the insertion loss (IL) below 1.26 dB, and an out-of-band (OoB) rejection of 10–45 dB. The SH-SAW-based filter shows a

$f_{c}$

of 3.36 GHz, an IL of 0.78 dB, and a 3-dB bandwidth of 180 MHz, while the LL-SAW-based filter shows a

$f_{c}$

of 3.85 GHz and an IL of 0.85 dB. Overall, LTOSiC may serve as an advanced material platform of acoustic devices for 5G-frequency range 1 (5G-FR1) bands.

查看原文本刊更多论文

基于LiTaO3/SiC异质衬底的高性能声波器件

我们在碳化硅(SiC)衬底上采用钽酸锂(LiTaO3)薄膜制备了高性能剪切水平表面声波(SH-SAW)和纵向漏声(LL-SAW)器件。采用离子切片法制备了4-in LiTaO3-on-SiC (LTOSiC)异质衬底。LTOSiC结构简单，在器件频率、质量因子(Q)、频率温度系数(TCF)和热输运性能方面取得了令人兴奋的成果，而非通常嵌入功能介电层(如SiO2)的硅基压电绝缘体衬底。所展示的谐振器具有1.19-4.91 GHz的可扩展谐振，其中GHz的SH-SAW谐振器具有8100的超高波德$Q$和- 4.3 ppm/K的优良TCF，而LL-SAW谐振器在5.0 GHz时具有1000的高波德$Q$和- 25.4 ppm/K的改进TCF。此外，所演示的滤波器的中心频率($f_{c}$)为2.74 ~ 4.26 GHz，插入损耗(IL)低于1.26 dB，带外抑制(OoB)为10 ~ 45 dB。sh - saw滤波器的$f_{c}$为3.36 GHz, IL为0.78 dB，带宽为180 MHz，而ll - saw滤波器的$f_{c}$为3.85 GHz, IL为0.85 dB。总体而言，LTOSiC可以作为5g频段1 (5G-FR1)声学器件的先进材料平台。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Transactions on Microwave Theory and Techniques 工程技术-工程：电子与电气

CiteScore

8.60

自引率

18.60%

发文量

486

审稿时长

6 months

期刊介绍： The IEEE Transactions on Microwave Theory and Techniques focuses on that part of engineering and theory associated with microwave/millimeter-wave components, devices, circuits, and systems involving the generation, modulation, demodulation, control, transmission, and detection of microwave signals. This includes scientific, technical, and industrial, activities. Microwave theory and techniques relates to electromagnetic waves usually in the frequency region between a few MHz and a THz; other spectral regions and wave types are included within the scope of the Society whenever basic microwave theory and techniques can yield useful results. Generally, this occurs in the theory of wave propagation in structures with dimensions comparable to a wavelength, and in the related techniques for analysis and design.