Molten-salt defect engineering of TiO2(B) nanobelts for enhanced photocatalytic hydrogen evolution

Q3 Materials Science
Daijun Xie, Yingjie Wang, Han Yu, Xinran Yang, Shining Geng, Xiangfu Meng
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引用次数: 2

Abstract

Defect engineering has been proved to be an effective strategy to adjust the electronic structures and photocatalytic activities of semiconductor oxides. However, due to lack of convenient approach to construct defect, the effect of oxygen vacancy defect on photocatalytic hydrogen evolution has always been controversial. Herein, we proposed a facile molten-salt defect engineering (MSDE) strategy to introduce oxygen vacancies (Vos) defects in TiO2(B) nanobelt (TNB). By tuning the addition amount of NaBH4 during molten-salt calcination process, the concentration of surface oxygen vacancies can be effectively adjusted. As a result, the appropriate oxygen vacancies on TNB not only suppressed the recombination of photogenerated electrons and holes, but also raised the conduction band position of TNB, thereby increasing the reduction potential of photogenerated electrons. The as-prepared photocatalyst TNB-NaBH4-2 with optimal Vos concentration exhibited highly efficient photocatalytic hydrogen evolution performance at a rate of 3.2 ​mmol ​g−1h−1 under simulate solar light, nearly 1.85 times than that of pristine TNB. This work proposes a simple method for constructing moderate oxygen vacancies on metal oxides for enhancing photocatalytic hydrogen evolution.

Abstract Image

增强光催化析氢的TiO2(B)纳米带熔盐缺陷工程
缺陷工程已被证明是调整半导体氧化物的电子结构和光催化活性的有效策略。然而,由于缺乏简便的缺陷构建方法,氧空位缺陷对光催化析氢的影响一直存在争议。在此,我们提出了一种易熔盐缺陷工程(MSDE)策略,在TiO2(B)纳米带(TNB)中引入氧空位(Vos)缺陷。通过调整熔盐煅烧过程中NaBH4的加入量,可以有效地调节表面氧空位的浓度。因此,在TNB上适当的氧空位不仅抑制了光生电子与空穴的复合,而且提高了TNB的导带位置,从而增加了光生电子的还原电位。制备的最佳Vos浓度的光催化剂TNB- nabh4 -2在模拟太阳光下表现出高效的光催化析氢性能,速率为3.2 mmol g−1h−1,是原始TNB的1.85倍。本文提出了一种在金属氧化物上构建适度氧空位以增强光催化析氢的简单方法。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
JCIS open
JCIS open Physical and Theoretical Chemistry, Colloid and Surface Chemistry, Surfaces, Coatings and Films
CiteScore
4.10
自引率
0.00%
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0
审稿时长
36 days
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