Electron beam irradiation induced crystallization behavior of amorphous Ge2Sb2Te5 chalcogenide material

Q3 Immunology and Microbiology

Applied Microscopy Pub Date : 2019-12-17 DOI:10.1186/s42649-019-0021-5

Byeong-Seon An

引用次数: 4

Abstract

The crystallization of amorphous Ge₂Sb₂Te₅ phase change material induced by electron beam irradiation was investigated by in-situ transmission electron microscopy (TEM). Amorphous matrix transformed into a partially crystalline state after being irradiated with a 200-keV electron beam for a long time. Real-time observation revealed that the crystallization of amorphous Ge₂Sb₂Te₅ film occurs through a nucleation and growth mechanism under electron beam irradiation in TEM. While uncertainty from the 2D projection remains, the nuclei have been observed to grow preferentially along the <?100> direction.

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电子束辐照诱导非晶态Ge2Sb2Te5硫系材料的结晶行为

采用原位透射电镜(TEM)研究了电子束辐照诱导非晶态Ge2Sb2Te5相变材料的结晶过程。在200 kev电子束的长期照射下，非晶态基体转变为部分晶态。实时观察结果表明，在电子束流辐照下，非晶态Ge2Sb2Te5薄膜以成核生长机制结晶。虽然2D投影的不确定性仍然存在，但已经观察到原子核优先沿着' 100 ' gt;方向。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Applied Microscopy Immunology and Microbiology-Applied Microbiology and Biotechnology

CiteScore

3.40

自引率

0.00%

发文量

审稿时长

10 weeks

期刊介绍： Applied Microscopy is a peer-reviewed journal sponsored by the Korean Society of Microscopy. The journal covers all the interdisciplinary fields of technological developments in new microscopy methods and instrumentation and their applications to biological or materials science for determining structure and chemistry. ISSN: 22875123, 22874445.