Z. Balogh, G. Mezei, László Pósa, Botond Sánta, A. Magyarkuti, A. Halbritter
{"title":"1/f noise spectroscopy and noise tailoring of nanoelectronic devices","authors":"Z. Balogh, G. Mezei, László Pósa, Botond Sánta, A. Magyarkuti, A. Halbritter","doi":"10.1088/2399-1984/ac14c8","DOIUrl":null,"url":null,"abstract":"In this paper, we review the 1/f-type noise properties of nanoelectronic devices focusing on three demonstrative platforms: resistive switching memories, graphene nanogaps and single-molecule nanowires. The functionality of such ultrasmall devices is confined to an extremely small volume, where bulk considerations on the noise lose their validity: the relative contribution of a fluctuator heavily depends on its distance from the device bottleneck, and the noise characteristics are sensitive to the nanometer-scale device geometry and details of the mostly non-classical transport mechanism. All these are reflected by a highly system-specific dependence of the noise properties on the active device volume (and the related device resistance), the frequency, or the applied voltage. Accordingly, 1/f-type noise measurements serve as a rich fingerprint of the relevant transport and noise-generating mechanisms in the studied nanoelectronic systems. Finally, we demonstrate that not only the fundamental understanding and the targeted noise suppression is fueled by the 1/f-type noise analysis, but novel probabilistic computing hardware platforms heavily seek well tailorable nanoelectric noise sources.","PeriodicalId":54222,"journal":{"name":"Nano Futures","volume":null,"pages":null},"PeriodicalIF":2.5000,"publicationDate":"2021-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Nano Futures","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1088/2399-1984/ac14c8","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 3
Abstract
In this paper, we review the 1/f-type noise properties of nanoelectronic devices focusing on three demonstrative platforms: resistive switching memories, graphene nanogaps and single-molecule nanowires. The functionality of such ultrasmall devices is confined to an extremely small volume, where bulk considerations on the noise lose their validity: the relative contribution of a fluctuator heavily depends on its distance from the device bottleneck, and the noise characteristics are sensitive to the nanometer-scale device geometry and details of the mostly non-classical transport mechanism. All these are reflected by a highly system-specific dependence of the noise properties on the active device volume (and the related device resistance), the frequency, or the applied voltage. Accordingly, 1/f-type noise measurements serve as a rich fingerprint of the relevant transport and noise-generating mechanisms in the studied nanoelectronic systems. Finally, we demonstrate that not only the fundamental understanding and the targeted noise suppression is fueled by the 1/f-type noise analysis, but novel probabilistic computing hardware platforms heavily seek well tailorable nanoelectric noise sources.
期刊介绍:
Nano Futures mission is to reflect the diverse and multidisciplinary field of nanoscience and nanotechnology that now brings together researchers from across physics, chemistry, biomedicine, materials science, engineering and industry.