Ambipolar carbon nanotube transistors with hybrid nanodielectric for low-voltage CMOS-like electronics

IF 2.5 4区 材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY
Luis Portilla, Jianwen Zhao, Jing Zhao, L. Occhipinti, V. Pecunia
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引用次数: 6

Abstract

The proliferation of place-and-forget devices driven by the exponentially-growing Internet of Things industry has created a demand for low-voltage thin-film transistor (TFT) electronics based on solution-processible semiconductors. Amongst solution-processible technologies, TFTs based on semiconducting single-walled carbon nanotubes (sc-SWCNTs) are a promising candidate owing to their comparatively high current driving capability in their above-threshold region at low voltages, which is desirable for applications with constraints on supply voltage and switching speed. Low-voltage above-threshold operation in sc-SWCNTs is customarily achieved by using high-capacitance-density gate dielectrics such as metal-oxides fabricated via atomic layer deposition (ALD) and ion-gels. These are unattractive, as ALD requires complex-processing or exotic precursors, while ion-gels lead to slower devices with poor stability. This work demonstrates the fabrication of low-voltage above-threshold sc-SWCNTs TFTs based on a high-capacitance-density hybrid nanodielectric, which is composed of a readily-made AlO x nanolayer and a solution-processed self-assembled monolayer (SAM). The resultant TFTs can withstand a gate-channel voltage of 1–2 V, which ensures their above-threshold operation with balanced ambipolar behavior and electron/hole mobilities of 7 cm2 V−1 s−1. Key to achieving balanced ambipolarity is the mitigation of environmental factors via the encapsulation of the devices with an optimized spin-on polymer coating, which preserves the inherent properties of the sc-SWCNTs. Such balanced ambipolarity enables the direct implementation of CMOS-like circuit configurations without the use of additional dopants, semiconductors or source/drain electrode metals. The resultant CMOS-like inverters operate in the above-threshold region with supply voltages in the 1–2 V range, and have positive noise margins, gain values surpassing 80 V/V, and a bandwidth exceeding 100 kHz. This reinforces SAM-based nanodielectrics as an attractive route to easy-to-fabricate sc-SWCNT TFTs that can operate in the above-threshold region and that can meet the demand for low-voltage TFT electronics requiring moderate speeds and higher driving currents for wearables and sensing applications.
具有混合纳米介质的双极性碳纳米管晶体管,用于低压类cmos电子器件
随着物联网行业呈指数级增长,即放即弃设备的激增,催生了对基于可解决方案处理半导体的低压薄膜晶体管(TFT)电子产品的需求。在溶液可加工技术中,基于半导体单壁碳纳米管(sc-SWCNTs)的TFTs是一个很有前途的候选技术,因为它们在低电压下在阈值以上区域具有相对较高的电流驱动能力,这对于电源电压和开关速度受限的应用是理想的。sc-SWCNTs中的低压高于阈值的工作通常是通过使用高电容密度的栅极介质来实现的,例如通过原子层沉积(ALD)和离子凝胶制备的金属氧化物。这些都没有吸引力,因为ALD需要复杂的处理或外来的前体,而离子凝胶导致设备速度较慢,稳定性较差。本研究展示了基于高电容密度杂化纳米电介质的低电压高于阈值的sc-SWCNTs tft的制造,该纳米电介质由现成的AlO x纳米层和溶液处理的自组装单层(SAM)组成。所得到的tft可以承受1 - 2 V的栅极通道电压,这确保了它们的高于阈值的工作,具有平衡的双极性行为和7 cm2 V−1 s−1的电子/空穴迁移率。实现平衡双极性的关键是通过使用优化的自旋聚合物涂层封装器件来减轻环境因素,从而保留sc-SWCNTs的固有特性。这种平衡的双极性可以直接实现类似cmos的电路配置,而无需使用额外的掺杂剂、半导体或源极/漏极金属。由此产生的类cmos逆变器工作在高于阈值的区域,电源电压在1-2 V范围内,并且具有正噪声余量,增益值超过80 V/V,带宽超过100 kHz。这加强了基于sam的纳米电介质作为易于制造的sc- swcnts TFT的有吸引力的途径,可以在高于阈值的区域工作,并且可以满足低压TFT电子设备的需求,需要中等速度和更高的驱动电流,用于可穿戴设备和传感应用。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
Nano Futures
Nano Futures Chemistry-General Chemistry
CiteScore
4.30
自引率
0.00%
发文量
35
期刊介绍: Nano Futures mission is to reflect the diverse and multidisciplinary field of nanoscience and nanotechnology that now brings together researchers from across physics, chemistry, biomedicine, materials science, engineering and industry.
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