Activation of two dopants, Bi and Er in δ-doped layer in Si crystal

IF 2.5 4区 材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY
K. Murata, S. Yagi, Takashi Kanazawa, S. Tsubomatsu, C. Kirkham, K. Nittoh, D. Bowler, K. Miki
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引用次数: 0

Abstract

Conventional doping processes are no longer viable for realizing extreme structures, such as a δ-doped layer with multiple elements, such as the heavy Bi, within the silicon crystal. Here, we demonstrate the formation of (Bi + Er)-δ-doped layer based on surface nanostructures, i.e. Bi nanolines, as the dopant source by molecular beam epitaxy. The concentration of both Er and Bi dopants is controlled by adjusting the amount of deposited Er atoms, the growth temperature during Si capping and surfactant techniques. Subsequent post-annealing processing is essential in this doping technique to obtain activated dopants in the δ-doped layer. Electric transport measurement and photoluminescence study revealed that both Bi and Er dopants were activated after post-annealing at moderate temperature.
Bi和Er两种掺杂剂在硅晶体δ掺杂层中的活化
传统的掺杂工艺不再适用于实现极端结构,例如硅晶体中含有多种元素(如重Bi)的δ掺杂层。在这里,我们展示了基于表面纳米结构(即Bi纳米线)作为掺杂源的分子束外延形成(Bi + Er) δ掺杂层。通过调整沉积Er原子的数量、Si封盖过程中的生长温度和表面活性剂技术来控制Er和Bi掺杂剂的浓度。在该掺杂技术中,为了在δ掺杂层中获得活化的掺杂,后续的后退火处理是必不可少的。电输运和光致发光研究表明,Bi和Er掺杂剂在中等温度下退火后均被活化。
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来源期刊
Nano Futures
Nano Futures Chemistry-General Chemistry
CiteScore
4.30
自引率
0.00%
发文量
35
期刊介绍: Nano Futures mission is to reflect the diverse and multidisciplinary field of nanoscience and nanotechnology that now brings together researchers from across physics, chemistry, biomedicine, materials science, engineering and industry.
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