Formation of Silicon Carbide Nanoclusters in the Process of Methyltrichlorosilane Oligomerization

IF 0.7 4区 化学 Q4 CHEMISTRY, MULTIDISCIPLINARY
P. M. Sylenko, A. V. Pokropivny, D. I. Andrushchenko, Yu.M. Solonin
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Abstract

On the basis of quantum-chemical analysis, it has been shown that the formation of silicon carbide nanoclusters can occur due to the chemical reaction between two CH3SiCl3 molecules on the first step of the process with the subsequent reaction between CH3SiCl3 and the formed clusters, rather than due to the homolytic C–Si bond rupture in the CH3SiCl3 molecule. Cases where a chlorine atom of a CH3SiCl3 molecule interacts with one hydrogen atom of another CH3SiCl3 molecule or cluster, and three chlorine atoms of a methyltrichlorosilane molecule form a three-center complex with three hydrogen atoms of a cluster have been considered. It is shown that the second case leads to the formation of SiC nanoparticles.

Abstract Image

甲基三氯硅烷低聚过程中碳化硅纳米团簇的形成
在量子化学分析的基础上,碳化硅纳米团簇的形成可能是由于两个CH3SiCl3分子在第一步发生化学反应,随后CH3SiCl3分子与形成的团簇发生化学反应,而不是由于CH3SiCl3分子中的C-Si键断裂。考虑了一个CH3SiCl3分子的氯原子与另一个CH3SiCl3分子或簇的一个氢原子相互作用,以及一个甲基三氯硅烷分子的三个氯原子与一个簇的三个氢原子形成三中心配合物的情况。结果表明,第二种情况导致了SiC纳米颗粒的形成。
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来源期刊
Theoretical and Experimental Chemistry
Theoretical and Experimental Chemistry CHEMISTRY, MULTIDISCIPLINARY-
CiteScore
1.60
自引率
10.00%
发文量
30
审稿时长
6-12 weeks
期刊介绍: Theoretical and Experimental Chemistry is a journal for the rapid publication of research communications and reviews on modern problems of physical chemistry such as: a) physicochemical bases, principles, and methods for creation of novel processes, compounds, and materials; b) physicochemical principles of chemical process control, influence of external physical forces on chemical reactions; c) physical nanochemistry, nanostructures and nanomaterials, functional nanomaterials, size-dependent properties of materials.
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