S. Chromy, Kai Rathjen, S. Fahlbusch, K. Hoffmann, S. Dickmann
{"title":"Influence of an Electrically Non-Conducting Heat Sink for Power Semiconductors on Radiated Interferences","authors":"S. Chromy, Kai Rathjen, S. Fahlbusch, K. Hoffmann, S. Dickmann","doi":"10.5194/ARS-16-117-2018","DOIUrl":null,"url":null,"abstract":"Abstract. Power semiconductors are used in a growing number of applications.\nFurthermore, faster switching transients and therefore higher switching\nfrequencies can be realised. This leads to higher radiated interferences at\nhigher frequencies. In power electronic applications, often a cooling concept\nfor the semiconductors is required to comply with the allowed temperature\nrange. Typically, heat sinks are made of aluminium and their conductive\nbehaviour can cause EMC problems. Via capacitive coupling, voltage transients\nare transferred from the power semiconductor to the heat sink, so that the\nheat sink behaves as an antenna and radiated interferences occur.\nFurthermore, a common mode current will appear if the heat sink is grounded.\nIn this paper, a promising approach to reduce radiated interferences from the\nheat sink and solve the common mode issue by using an electrically isolating\nceramic heat sink is presented. The influence of an aluminium nitride ceramic\nheat sink on cooling performance and EMC behaviour has been investigated. For\nthis purpose, two geometrical identically heat sinks made from aluminium and\naluminium nitride have been compared regarding thermal performance and\nradiated interferences characterised by S-parameters.\n","PeriodicalId":45093,"journal":{"name":"Advances in Radio Science","volume":" ","pages":""},"PeriodicalIF":0.9000,"publicationDate":"2018-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Advances in Radio Science","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.5194/ARS-16-117-2018","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 4
Abstract
Abstract. Power semiconductors are used in a growing number of applications.
Furthermore, faster switching transients and therefore higher switching
frequencies can be realised. This leads to higher radiated interferences at
higher frequencies. In power electronic applications, often a cooling concept
for the semiconductors is required to comply with the allowed temperature
range. Typically, heat sinks are made of aluminium and their conductive
behaviour can cause EMC problems. Via capacitive coupling, voltage transients
are transferred from the power semiconductor to the heat sink, so that the
heat sink behaves as an antenna and radiated interferences occur.
Furthermore, a common mode current will appear if the heat sink is grounded.
In this paper, a promising approach to reduce radiated interferences from the
heat sink and solve the common mode issue by using an electrically isolating
ceramic heat sink is presented. The influence of an aluminium nitride ceramic
heat sink on cooling performance and EMC behaviour has been investigated. For
this purpose, two geometrical identically heat sinks made from aluminium and
aluminium nitride have been compared regarding thermal performance and
radiated interferences characterised by S-parameters.