The FDTD Simulation of QDLED Performance Dependency on the Location of Colloidal Quantum Dots

Q4 Engineering
N. Heydari, S. Ghorashi, M. Fathollahi
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引用次数: 0

Abstract

All types of Light Emitting Diodes (LEDs) are desirable because of their widespread applications. The Quantum Dot-Based Light Emitting Diodes (QDLEDs) have a lot of unique properties attracting more attention. Predicting performance of QDLEDs can lead to a better and more efficient design of the device. In this paper, we have attempted to investigate the dependency of the device performance on the location of Quantum Dots (QDs) and determine the best location for the QDs in the QDLEDs. We use FDTD method to simulate and analysis the QDLEDs structure. The QDs are located in five different positions in TPBi layer then results are compared with each other. The results show that the closer the QDs to the hole transport layer (HTL), the better the luminescence. This improvement would be explained by two charge transport mechanisms including direct charge injection and exciton energy transfer. The results show that when the QDs are closer to the HTL, the device performance is better due to the greater balance of carriers.  In this condition holes can transfer from the HTL to the valence band easier.
胶体量子点位置对量子点发光二极管性能影响的FDTD模拟
所有类型的发光二极管(LED)由于其广泛的应用而是合乎需要的。量子点基发光二极管(QDLED)具有许多独特的特性,越来越受到人们的关注。预测QDLED的性能可以带来更好、更有效的器件设计。在本文中,我们试图研究器件性能对量子点(QDs)位置的依赖性,并确定量子点在QDLED中的最佳位置。我们使用FDTD方法对QDLED结构进行了仿真和分析。量子点位于TPBi层中的五个不同位置,然后将结果相互比较。结果表明,量子点离空穴传输层越近,发光效果越好。这种改进可以用两种电荷传输机制来解释,包括直接电荷注入和激子能量转移。结果表明,当量子点更接近HTL时,由于载流子的平衡性更大,器件性能更好。在这种情况下,空穴可以更容易地从HTL转移到价带。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
Majlesi Journal of Electrical Engineering
Majlesi Journal of Electrical Engineering Engineering-Electrical and Electronic Engineering
CiteScore
1.20
自引率
0.00%
发文量
9
期刊介绍: The scope of Majlesi Journal of Electrcial Engineering (MJEE) is ranging from mathematical foundation to practical engineering design in all areas of electrical engineering. The editorial board is international and original unpublished papers are welcome from throughout the world. The journal is devoted primarily to research papers, but very high quality survey and tutorial papers are also published. There is no publication charge for the authors.
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