{"title":"The FDTD Simulation of QDLED Performance Dependency on the Location of Colloidal Quantum Dots","authors":"N. Heydari, S. Ghorashi, M. Fathollahi","doi":"10.29252/MJEE.14.3.11","DOIUrl":null,"url":null,"abstract":"All types of Light Emitting Diodes (LEDs) are desirable because of their widespread applications. The Quantum Dot-Based Light Emitting Diodes (QDLEDs) have a lot of unique properties attracting more attention. Predicting performance of QDLEDs can lead to a better and more efficient design of the device. In this paper, we have attempted to investigate the dependency of the device performance on the location of Quantum Dots (QDs) and determine the best location for the QDs in the QDLEDs. We use FDTD method to simulate and analysis the QDLEDs structure. The QDs are located in five different positions in TPBi layer then results are compared with each other. The results show that the closer the QDs to the hole transport layer (HTL), the better the luminescence. This improvement would be explained by two charge transport mechanisms including direct charge injection and exciton energy transfer. The results show that when the QDs are closer to the HTL, the device performance is better due to the greater balance of carriers. In this condition holes can transfer from the HTL to the valence band easier.","PeriodicalId":37804,"journal":{"name":"Majlesi Journal of Electrical Engineering","volume":"14 1","pages":"89-94"},"PeriodicalIF":0.0000,"publicationDate":"2020-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Majlesi Journal of Electrical Engineering","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.29252/MJEE.14.3.11","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"Engineering","Score":null,"Total":0}
引用次数: 0
Abstract
All types of Light Emitting Diodes (LEDs) are desirable because of their widespread applications. The Quantum Dot-Based Light Emitting Diodes (QDLEDs) have a lot of unique properties attracting more attention. Predicting performance of QDLEDs can lead to a better and more efficient design of the device. In this paper, we have attempted to investigate the dependency of the device performance on the location of Quantum Dots (QDs) and determine the best location for the QDs in the QDLEDs. We use FDTD method to simulate and analysis the QDLEDs structure. The QDs are located in five different positions in TPBi layer then results are compared with each other. The results show that the closer the QDs to the hole transport layer (HTL), the better the luminescence. This improvement would be explained by two charge transport mechanisms including direct charge injection and exciton energy transfer. The results show that when the QDs are closer to the HTL, the device performance is better due to the greater balance of carriers. In this condition holes can transfer from the HTL to the valence band easier.
期刊介绍:
The scope of Majlesi Journal of Electrcial Engineering (MJEE) is ranging from mathematical foundation to practical engineering design in all areas of electrical engineering. The editorial board is international and original unpublished papers are welcome from throughout the world. The journal is devoted primarily to research papers, but very high quality survey and tutorial papers are also published. There is no publication charge for the authors.