Unveiling the origin of n-type doping of natural MoS2: carbon

IF 9.1 2区材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY

npj 2D Materials and Applications Pub Date : 2023-09-05 DOI:10.1038/s41699-023-00424-x

Youngsin Park, Nannan Li, Daesung Jung, Laishram Tomba Singh, Jaeyoon Baik, Eunsook Lee, Dongseok Oh, Young Dok Kim, Jin Yong Lee, Jeongseok Woo, Seungmin Park, Hanchul Kim, Geunseop Lee, Geunsik Lee, Chan-Cuk Hwang

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Abstract

MoS2 has attracted intense interest in many applications. Natural MoS2 and field-effect transistors made of it generally exhibit n-type characteristics, but its origin is unknown. Herein, we show that C is the origin of the universal n-type doping of natural MoS2. Photoemission spectroscopies reveal that while many MoS2 samples with C detected are n-type, some without C exhibit p-type characteristics. The C-free, p-type MoS2 changes to n-type over time with the concurrent appearance of C that is out-diffused from bulk, indicating that C induces the n-type doping. The C-origin is verified by C-deposition and supported by theoretical calculations. This carbon appears as nanometer-scale defects frequently observed in scanning tunneling microscopy. In addition, we propose, based on the calculations, that S vacancies are responsible for the p-type characteristics, which contrasts with the widespread belief. This work provides new perspectives on MoS2 doping and presents a new direction for fabricating reliable MoS2 devices.

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揭开天然MoS2：碳n型掺杂的起源

MoS2 在许多应用领域都引起了人们的浓厚兴趣。天然 MoS2 及其场效应晶体管通常具有 n 型特性，但其起源却不为人知。在这里，我们证明了 C 是天然 MoS2 普遍 n 型掺杂的起源。光发射光谱显示，虽然许多检测到 C 的 MoS2 样品是 n 型的，但一些未检测到 C 的 MoS2 样品却表现出 p 型特性。随着时间的推移，不含 C 的 p 型 MoS2 转变为 n 型，同时出现了从体外扩散的 C，这表明 C 诱导了 n 型掺杂。碳源通过碳沉积得到验证，并得到理论计算的支持。这种碳在扫描隧道显微镜中经常以纳米级缺陷的形式出现。此外，我们还根据计算结果提出，S 空位是产生 p 型特性的原因，这与普遍的看法不同。这项研究为 MoS2 掺杂提供了新的视角，并为制造可靠的 MoS2 器件指明了新的方向。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

npj 2D Materials and Applications Engineering-Mechanics of Materials

CiteScore

14.50

自引率

2.10%

发文量

审稿时长

15 weeks

期刊介绍： npj 2D Materials and Applications publishes papers on the fundamental behavior, synthesis, properties and applications of existing and emerging 2D materials. By selecting papers with the potential for impact, the journal aims to facilitate the transfer of the research of 2D materials into wide-ranging applications.