Ultra-thin double barrier AlGaN/GaN high threshold voltage HEMT with graded AlGaN/Si3N4 gate and p-type buffer layer

IF 2.2 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Journal of Computational Electronics Pub Date : 2023-06-05 DOI:10.1007/s10825-023-02063-3

Kexiu Dong, Yangyi Zhang, Bingting Wang, Yanli liu, Wenjuan Yu

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Abstract

An ultra-thin double barrier enhancement mode (E-mode) AlGaN/GaN high-electron mobility transistor (HEMT) with p-type buffer layer and Si₃N₄/graded p-AlGaN gate is proposed and investigated by Silvaco TCAD. The simulation results show that the designed HEMT can obtain a high threshold voltage over 5.0 V and large gate swing. The maximum gate leakage current is 3.11 × 10^–4 A/mm at 30 V gate voltage, which decreases four orders of magnitude compared to the conventional double barrier HEMTs. Due to the p-type buffer layer, the cut-off frequency for the proposed HEMT is raised over three-times compared to the conventional double barrier structure HEMT with n-type buffer layer. Meanwhile the designed HEMT exhibits high breakdown voltage and large current-gain. Moreover, the impacts of Si₃N₄ layer thickness under gate and GaN channel layer thickness are analyzed. Both layers play significant roles in obtaining high threshold voltage for the device by adjusting the conduction band energy of AlGaN/GaN interface potential well.

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具有梯度AlGaN/Si3N4栅极和p型缓冲层的超薄双势垒AlGaN/GaN高阈值电压HEMT

提出了一种具有p型缓冲层和Si3N4/梯度p-AlGaN栅极的超薄双势垒增强模式(E-mode) AlGaN/GaN高电子迁移率晶体管(HEMT)，并利用Silvaco TCAD进行了研究。仿真结果表明，所设计的HEMT具有5.0 V以上的高阈值电压和较大的栅极摆幅。在30 V栅极电压下，最大栅极漏电流为3.11 × 10-4 A/mm，与传统双势垒hemt相比降低了4个数量级。由于p型缓冲层，与传统的具有n型缓冲层的双势垒结构HEMT相比，所提出的HEMT的截止频率提高了三倍以上。同时，所设计的HEMT具有高击穿电压和大电流增益的特点。此外，还分析了栅极下氮化硅层厚度和氮化镓沟道层厚度的影响。这两层都能很好地调节AlGaN/GaN界面电位的传导带能量，从而为器件获得高阈值电压发挥重要作用。

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来源期刊

Journal of Computational Electronics ENGINEERING, ELECTRICAL & ELECTRONIC-PHYSICS, APPLIED

CiteScore

4.50

自引率

4.80%

发文量

142

审稿时长

>12 weeks

期刊介绍： he Journal of Computational Electronics brings together research on all aspects of modeling and simulation of modern electronics. This includes optical, electronic, mechanical, and quantum mechanical aspects, as well as research on the underlying mathematical algorithms and computational details. The related areas of energy conversion/storage and of molecular and biological systems, in which the thrust is on the charge transport, electronic, mechanical, and optical properties, are also covered. In particular, we encourage manuscripts dealing with device simulation; with optical and optoelectronic systems and photonics; with energy storage (e.g. batteries, fuel cells) and harvesting (e.g. photovoltaic), with simulation of circuits, VLSI layout, logic and architecture (based on, for example, CMOS devices, quantum-cellular automata, QBITs, or single-electron transistors); with electromagnetic simulations (such as microwave electronics and components); or with molecular and biological systems. However, in all these cases, the submitted manuscripts should explicitly address the electronic properties of the relevant systems, materials, or devices and/or present novel contributions to the physical models, computational strategies, or numerical algorithms.