Thin-film image sensors with a pinned photodiode structure

IF 33.7 1区工程技术 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC

Nature Electronics Pub Date : 2023-08-14 DOI:10.1038/s41928-023-01016-9

Jiwon Lee, Epimitheas Georgitzikis, Yannick Hermans, Nikolas Papadopoulos, Naresh Chandrasekaran, Minhyun Jin, Abu Bakar Siddik, Florian De Roose, Griet Uytterhoeven, Joo Hyoung Kim, Renaud Puybaret, Yunlong Li, Vladimir Pejovic, Gauri Karve, David Cheyns, Jan Genoe, Paweł E. Malinowski, Paul Heremans, Kris Myny

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Abstract

Image sensors made using silicon complementary metal–oxide–semiconductor technology can be found in numerous electronic devices and typically rely on pinned photodiode structures. Photodiodes based on thin films can have a high absorption coefficient and a wider wavelength range than silicon devices. However, their use in image sensors has been limited by high kTC noise, dark current and image lag. Here we show that thin-film-based image sensors with a pinned photodiode structure can have comparable noise performance to a silicon pinned photodiode pixel. We integrate either a visible-to-near-infrared organic photodiode or a short-wave infrared colloidal quantum dot photodiode with a thin-film transistor and silicon readout circuitry. The thin-film pinned photodiode structures exhibit low kTC noise, suppressed dark current, high full-well capacity and high electron-to-voltage conversion gain, as well as preserving the benefits of the thin-film materials. An image sensor based on the organic absorber has a quantum efficiency of 54% at 940 nm and read noise of 6.1e–. Organic semiconductor and colloidal quantum-dot-based thin-film image sensors show reduced noise, dark current and image lag when a pinned photodiode pixel structure, similar to those in silicon-based image sensors, is used.

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具有钉扎光电二极管结构的薄膜图像传感器

使用硅互补金属氧化物半导体技术制造的图像传感器可在许多电子设备中找到，通常采用针式光电二极管结构。与硅器件相比，基于薄膜的光电二极管具有更高的吸收系数和更宽的波长范围。然而，它们在图像传感器中的应用一直受到高 kTC 噪声、暗电流和图像滞后的限制。在这里，我们展示了具有针状光电二极管结构的薄膜图像传感器，其噪声性能可与硅针状光电二极管像素相媲美。我们将可见光到近红外有机光电二极管或短波红外胶体量子点光电二极管与薄膜晶体管和硅读出电路集成在一起。薄膜引脚光电二极管结构具有低 kTC 噪声、抑制暗电流、高全阱容量和高电子-电压转换增益等特点，同时还保留了薄膜材料的优点。基于有机吸收体的图像传感器在 940 纳米波长下的量子效率为 54%，读取噪声为 6.1e-。当使用与硅基图像传感器类似的针状光电二极管像素结构时，基于有机半导体和胶体量子点的薄膜图像传感器显示出更低的噪声、暗电流和图像滞后。

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来源期刊

Nature Electronics Engineering-Electrical and Electronic Engineering

CiteScore

47.50

自引率

2.30%

发文量

159

期刊介绍： Nature Electronics is a comprehensive journal that publishes both fundamental and applied research in the field of electronics. It encompasses a wide range of topics, including the study of new phenomena and devices, the design and construction of electronic circuits, and the practical applications of electronics. In addition, the journal explores the commercial and industrial aspects of electronics research. The primary focus of Nature Electronics is on the development of technology and its potential impact on society. The journal incorporates the contributions of scientists, engineers, and industry professionals, offering a platform for their research findings. Moreover, Nature Electronics provides insightful commentary, thorough reviews, and analysis of the key issues that shape the field, as well as the technologies that are reshaping society. Like all journals within the prestigious Nature brand, Nature Electronics upholds the highest standards of quality. It maintains a dedicated team of professional editors and follows a fair and rigorous peer-review process. The journal also ensures impeccable copy-editing and production, enabling swift publication. Additionally, Nature Electronics prides itself on its editorial independence, ensuring unbiased and impartial reporting. In summary, Nature Electronics is a leading journal that publishes cutting-edge research in electronics. With its multidisciplinary approach and commitment to excellence, the journal serves as a valuable resource for scientists, engineers, and industry professionals seeking to stay at the forefront of advancements in the field.