Performance optimization of single graded CIGS absorber and buffer layers for high efficiency: A numerical approach

IF 3.3 3区 物理与天体物理 Q2 PHYSICS, CONDENSED MATTER
R. Prasad, Rajarshi Pal, Udai P. Singh
{"title":"Performance optimization of single graded CIGS absorber and buffer layers for high efficiency: A numerical approach","authors":"R. Prasad,&nbsp;Rajarshi Pal,&nbsp;Udai P. Singh","doi":"10.1016/j.spmi.2021.107094","DOIUrl":null,"url":null,"abstract":"<div><p>We present a numerical simulation based study of single graded Cu(In,Ga)Se<sub>2</sub><span><span> (Copper Indium </span>Gallium<span><span> Diselenide) thin film<span> solar cell. In this work, initially a basic CIGS single graded cell structure is optimized in terms of thickness, band-gap and doping concentration. CdS is kept as the buffer layer, which is widely used for high efficiency CIGS solar cells. In the next step, CdS is replaced with ZnMgO as the buffer layer in order to exploit its greater </span></span>photon absorption ability due to its higher band-gap which further enhances the cell efficiency. A thorough analysis is carried out on the solar cell parameters open circuit voltage (V</span></span><sub>oc</sub>), short circuit current density (J<sub>sc</sub><span>), fill factor (FF) and quantum efficiency (η) of the photovoltaic cell structure. An intermediate layer of p-type MoS</span><sub>2</sub><span> is inserted in between the single graded CIGS absorber layers. The objective is to limit the unintentional Ga inter diffusion and maintain the desired grading during the high temperature annealing for the absorber preparation. The power conversion efficiency of the bilayer device structure with Ga fraction x=(0.31) of the top absorber layer along with Ga fraction y=(0.25) of the bottom absorber layer exhibits an improved efficiency from 24.02% (CdS as the buffer layer) to 25.37% (ZnMgO as buffer layer). An excellent power efficiency of η = 26.78% is reported after adding the intermediate layer of p-type MoS</span><sub>2</sub> and optimizing its thickness and the carrier concentration.</p></div>","PeriodicalId":22044,"journal":{"name":"Superlattices and Microstructures","volume":null,"pages":null},"PeriodicalIF":3.3000,"publicationDate":"2022-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Superlattices and Microstructures","FirstCategoryId":"101","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0749603621002950","RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"PHYSICS, CONDENSED MATTER","Score":null,"Total":0}
引用次数: 8

Abstract

We present a numerical simulation based study of single graded Cu(In,Ga)Se2 (Copper Indium Gallium Diselenide) thin film solar cell. In this work, initially a basic CIGS single graded cell structure is optimized in terms of thickness, band-gap and doping concentration. CdS is kept as the buffer layer, which is widely used for high efficiency CIGS solar cells. In the next step, CdS is replaced with ZnMgO as the buffer layer in order to exploit its greater photon absorption ability due to its higher band-gap which further enhances the cell efficiency. A thorough analysis is carried out on the solar cell parameters open circuit voltage (Voc), short circuit current density (Jsc), fill factor (FF) and quantum efficiency (η) of the photovoltaic cell structure. An intermediate layer of p-type MoS2 is inserted in between the single graded CIGS absorber layers. The objective is to limit the unintentional Ga inter diffusion and maintain the desired grading during the high temperature annealing for the absorber preparation. The power conversion efficiency of the bilayer device structure with Ga fraction x=(0.31) of the top absorber layer along with Ga fraction y=(0.25) of the bottom absorber layer exhibits an improved efficiency from 24.02% (CdS as the buffer layer) to 25.37% (ZnMgO as buffer layer). An excellent power efficiency of η = 26.78% is reported after adding the intermediate layer of p-type MoS2 and optimizing its thickness and the carrier concentration.

单梯度CIGS吸收体和高效缓冲层的性能优化:数值方法
我们提出了一种基于数值模拟的单梯度Cu(In,Ga)Se2(铜铟镓二硒化物)薄膜太阳能电池。在这项工作中,首先从厚度、带隙和掺杂浓度方面优化了基本的CIGS单梯度电池结构。CdS作为缓冲层,广泛应用于高效CIGS太阳能电池。下一步,将CdS替换为ZnMgO作为缓冲层,利用其更高的带隙带来的更强的光子吸收能力,进一步提高电池效率。对太阳能电池结构的开路电压(Voc)、短路电流密度(Jsc)、填充系数(FF)和量子效率(η)等参数进行了深入分析。在单梯度CIGS吸收层之间插入p型二硫化钼中间层。目的是在吸收剂制备的高温退火过程中限制无意的Ga间扩散并保持所需的分级。顶部吸收层Ga分数x=(0.31),底部吸收层Ga分数y=(0.25)的双层器件结构的功率转换效率从24.02% (CdS为缓冲层)提高到25.37% (ZnMgO为缓冲层)。加入p型二硫化钼中间层并优化其厚度和载流子浓度后,功率效率达到了26.78%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
Superlattices and Microstructures
Superlattices and Microstructures 物理-物理:凝聚态物理
CiteScore
6.10
自引率
3.20%
发文量
35
审稿时长
2.8 months
期刊介绍: Micro and Nanostructures is a journal disseminating the science and technology of micro-structures and nano-structures in materials and their devices, including individual and collective use of semiconductors, metals and insulators for the exploitation of their unique properties. The journal hosts papers dealing with fundamental and applied experimental research as well as theoretical studies. Fields of interest, including emerging ones, cover: • Novel micro and nanostructures • Nanomaterials (nanowires, nanodots, 2D materials ) and devices • Synthetic heterostructures • Plasmonics • Micro and nano-defects in materials (semiconductor, metal and insulators) • Surfaces and interfaces of thin films In addition to Research Papers, the journal aims at publishing Topical Reviews providing insights into rapidly evolving or more mature fields. Written by leading researchers in their respective fields, those articles are commissioned by the Editorial Board. Formerly known as Superlattices and Microstructures, with a 2021 IF of 3.22 and 2021 CiteScore of 5.4
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信