A novel design of graphene field-effect transistor-based out-phasing power amplifier

IF 2.2 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Journal of Computational Electronics Pub Date : 2023-07-04 DOI:10.1007/s10825-023-02064-2

Mohsen Pooya, Mohammad Bagher Tavakoli, Farbod Setoudeh, Ashkan Horri, Ali Safari

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Abstract

Graphene transistors are promising candidates for nano-circuits in telecommunication bands due to their high amplification bandwidth, extremely high carrier mobility, high saturation velocity, and the good electric conductance of the graphene channel. In this study, the parameters of a compact model are implemented in the Verilog-A language. An out-phasing power amplifier is designed using microstrip input/output matching, bias network, and quarter-wave Chireix divider/combiner over the frequency range of 2–4 GHz. The simulation results of graphene out-phasing power amplifier in advanced design system software show an increase of about 14 dB in the output gain, an intermodulation distortion (IMD) suppression of better than − 21.8 dBc, and a DC power consumption of 20 mW. In addition, the figures of merit of the proposed design show improvements in terms of gain, IMD, power consumption, and input/output return loss compared to other graphene amplifiers at different frequencies. A comparison of our design with some other amplifiers in various technologies at different frequencies shows a good gain and better IMD suppression in our design. Moreover, the power consumption, input/output return loss, and bandwidth of our strategy are relatively improved.

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一种基于石墨烯场效应晶体管的新型失相功率放大器设计

石墨烯晶体管由于其高放大带宽、极高的载流子迁移率、高饱和速度和石墨烯通道的良好电导率而成为电信波段纳米电路的有希望的候选者。在本研究中，一个紧凑模型的参数在Verilog-A语言中实现。采用微带输入/输出匹配、偏置网络和四分之一波Chireix分频/合成器，在2-4 GHz频率范围内设计了一种分相功率放大器。在先进的设计系统软件中对石墨烯同相功率放大器的仿真结果表明，输出增益提高了约14 dB，抑制互调失真(IMD)优于- 21.8 dBc，直流功耗为20 mW。此外，与其他不同频率的石墨烯放大器相比，所提出的设计在增益、IMD、功耗和输入/输出回波损耗方面都有改进。将我们的设计与其他各种技术的放大器在不同频率下的比较表明，我们的设计具有良好的增益和更好的IMD抑制。此外，我们的策略在功耗、输入/输出回波损耗和带宽方面都有了相对的提高。

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来源期刊

Journal of Computational Electronics ENGINEERING, ELECTRICAL & ELECTRONIC-PHYSICS, APPLIED

CiteScore

4.50

自引率

4.80%

发文量

142

审稿时长

>12 weeks

期刊介绍： he Journal of Computational Electronics brings together research on all aspects of modeling and simulation of modern electronics. This includes optical, electronic, mechanical, and quantum mechanical aspects, as well as research on the underlying mathematical algorithms and computational details. The related areas of energy conversion/storage and of molecular and biological systems, in which the thrust is on the charge transport, electronic, mechanical, and optical properties, are also covered. In particular, we encourage manuscripts dealing with device simulation; with optical and optoelectronic systems and photonics; with energy storage (e.g. batteries, fuel cells) and harvesting (e.g. photovoltaic), with simulation of circuits, VLSI layout, logic and architecture (based on, for example, CMOS devices, quantum-cellular automata, QBITs, or single-electron transistors); with electromagnetic simulations (such as microwave electronics and components); or with molecular and biological systems. However, in all these cases, the submitted manuscripts should explicitly address the electronic properties of the relevant systems, materials, or devices and/or present novel contributions to the physical models, computational strategies, or numerical algorithms.