Study on thickness-dependence characteristics of bismuth ferrite (BFO) for ultraviolet (UV) photodetector application

IF 4.7 Q2 NANOSCIENCE & NANOTECHNOLOGY

Micro and Nano Systems Letters Pub Date : 2021-01-04 DOI:10.1186/s40486-020-00128-7

Shahnaz Kossar, R. Amiruddin, Asif Rasool

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引用次数: 27

Abstract

The present research work reports on the fabrication of ultraviolet (UV) photodetectors using bismuth ferrite (BiFeO_3, BFO) thin films with varying thickness. Using the spray pyrolysis technique, BFO thin films were deposited on the glass substrate at 673?K. The deposited BFO thin films were characterized by Raman and FTIR spectroscopic analysis. The morphological analysis reveals uniform grain distribution for the prepared BFO samples. The optical analysis reveals that transmittance value decreases upon an increase in the thickness of BFO thin films and the calculated optical band gap value lies between 2.0 to 2.3?eV. The varying thickness of the BFO active layer was stacked between ITO and Al electrodes and the current–voltage (I–V) characteristics of the fabricated ITO/BFO/Al devices were studied under dark and UV illumination (λ?=?365?nm). It was observed that BFO with an optimum thickness (365?nm) exhibits higher photoresponsivity of 110?mA/W with an external quantum efficiency (EQE) of 37.30%. The impact of different thickness of the BFO active layer, the role of adsorption and desorption of oxygen (O₂) molecules upon the surface of BFO layers towards UV photoresponse characteristics were investigated.

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用于紫外(UV)光电探测器的铋铁氧体(BFO)厚度依赖特性的研究

本文报道了利用不同厚度的铋铁氧体(BiFeO3, BFO)薄膜制备紫外光电探测器的研究工作。采用喷雾热解技术，在673 K温度下在玻璃基板上沉积BFO薄膜。用拉曼光谱和傅里叶红外光谱对制备的BFO薄膜进行了表征。形态学分析表明制备的BFO样品晶粒分布均匀。光学分析表明，透射率随BFO薄膜厚度的增加而减小，计算得到的光学带隙值在2.0 ~ 2.3 eV之间。在ITO和Al电极之间堆叠不同厚度的BFO有源层，并在暗光源和紫外光源(λ = 365nm)下研究了制备的ITO/BFO/Al器件的电流-电压(I-V)特性。结果表明，最佳厚度为365nm的BFO具有较高的光响应率，达到110?mA/W，外量子效率(EQE)为37.30%。研究了BFO活性层厚度、氧分子在BFO活性层表面的吸附和解吸对紫外光响应特性的影响。

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