A generic simple model of synaptic memristor with local activity for neuromorphic applications

IF 2.2 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Journal of Computational Electronics Pub Date : 2023-01-12 DOI:10.1007/s10825-023-02007-x

Pratyusha Nune, Santanu Mandal, Amit Saha, Rajesh Saha

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引用次数: 1

Abstract

A non-volatile locally active memristor is a promising candidate for neuromorphic computing based on artificial synapses and neurons, due to its high-speed switching, strong scalability, high computing, and low power consumption. In this paper, a novel generic model of voltage-controlled memristor with local activity and synaptic behavior is proposed. The circuit design of this memristor is very simple and easy to fabricate. Using small-signal analysis, the behavior of local activity is analyzed for this memristor model. Through the theoretical study, three significant parameters are identified to derive an equivalent circuit (small-signal), which is important for the study on dynamics of this memristor. To check the feasibility of the proposed model, a hardware-based implementation is performed through breadboard analysis. Important fingerprints of this memristor are verified both in theoretically and experimentally. The hardware-based results confirm the non-volatile characteristic and synaptic behavior of this memristor. Several experimental results exhibit a tunable modulation of synaptic weights with pulses, which effectively mimic different bio-synaptic characteristics like potentiation, depression, STDP (Spike-Time-Dependent Plasticity), STP (Short-Term-Plasticity), LTP (Long-Term-Plasticity), learning, forgetting, PPF (Paired-Pulse Facility), and PTP (Post-Tetanic Potentiation).

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神经形态学应用中具有局部活性的突触忆阻器的一般简单模型

非易失性局部有源忆阻器具有高速开关、强可扩展性、高计算量和低功耗等优点，是基于人工突触和神经元的神经形态计算的理想选择。本文提出了一种具有局部活动和突触行为的压控记忆电阻器的通用模型。该忆阻器电路设计简单，易于制作。利用小信号分析方法，分析了该忆阻器模型的局部活动特性。通过理论研究，确定了三个重要参数，推导出等效电路(小信号)，这对该忆阻器的动力学研究具有重要意义。为了验证所提出模型的可行性，通过面包板分析进行了基于硬件的实现。对该忆阻器的重要指纹进行了理论和实验验证。基于硬件的结果证实了该忆阻器的非易失性和突触行为。一些实验结果表明，脉冲可以调节突触权重，有效地模拟不同的生物突触特征，如增强、抑制、STDP (Spike-Time-Dependent Plasticity)、STP (short -Plasticity)、LTP (long - term Plasticity)、学习、遗忘、PPF (Paired-Pulse Facility)和PTP (Post-Tetanic potentiation)。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Journal of Computational Electronics ENGINEERING, ELECTRICAL & ELECTRONIC-PHYSICS, APPLIED

CiteScore

4.50

自引率

4.80%

发文量

142

审稿时长

>12 weeks

期刊介绍： he Journal of Computational Electronics brings together research on all aspects of modeling and simulation of modern electronics. This includes optical, electronic, mechanical, and quantum mechanical aspects, as well as research on the underlying mathematical algorithms and computational details. The related areas of energy conversion/storage and of molecular and biological systems, in which the thrust is on the charge transport, electronic, mechanical, and optical properties, are also covered. In particular, we encourage manuscripts dealing with device simulation; with optical and optoelectronic systems and photonics; with energy storage (e.g. batteries, fuel cells) and harvesting (e.g. photovoltaic), with simulation of circuits, VLSI layout, logic and architecture (based on, for example, CMOS devices, quantum-cellular automata, QBITs, or single-electron transistors); with electromagnetic simulations (such as microwave electronics and components); or with molecular and biological systems. However, in all these cases, the submitted manuscripts should explicitly address the electronic properties of the relevant systems, materials, or devices and/or present novel contributions to the physical models, computational strategies, or numerical algorithms.