Velocity-field characteristics of MgxZn1−xO/ZnO heterostructures

IF 2.2 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Journal of Computational Electronics Pub Date : 2023-01-12 DOI:10.1007/s10825-022-01999-2

DongFeng Liu

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引用次数: 1

Abstract

In this work, electron transport in Mg_xZn_1−xO/ZnO heterostructures at room temperature is simulated by the ensemble Monte Carlo (EMC) method. Electron scattering mechanisms including acoustic deformation potential, piezoelectric acoustic phonon, polar optical phonon (POP), interface roughness (IFR), dislocation, electron escape (ESC) and capture (CPR) by optical phonons, and random alloy are considered in EMC. The electron drift velocity in Mg_xZn_1−xO/ZnO heterostructures is calculated for various Mg mole fractions x (0.1–0.3) at electric fields up to 25 kV/cm. We find that no obvious velocity saturation occurs in the range of the electric field considered. The results show that ESC scattering is one of the main physical mechanisms limiting the drift velocity. On the other hand, the competition between IFR and intersubband POP scattering is found to play an important role in the change in electron drift velocity with the increasing Mg mole fractions.

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MgxZn1−xO/ZnO异质结构的速度场特性

本文采用集成蒙特卡罗(EMC)方法模拟了室温下MgxZn1−xO/ZnO异质结构中的电子传递。电子散射机制包括声变形势、压电声声子、极性光声子(POP)、界面粗糙度(IFR)、位错、光声子的电子逸出(ESC)和捕获(CPR)以及随机合金。在25 kV/cm的电场下，计算了不同Mg摩尔分数x(0.1 ~ 0.3)下MgxZn1−xO/ZnO异质结构中的电子漂移速度。我们发现在考虑的电场范围内没有出现明显的速度饱和。结果表明，ESC散射是限制漂移速度的主要物理机制之一。另一方面，发现随着Mg摩尔分数的增加，IFR和子带间POP散射之间的竞争在电子漂移速度的变化中起重要作用。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Journal of Computational Electronics ENGINEERING, ELECTRICAL & ELECTRONIC-PHYSICS, APPLIED

CiteScore

4.50

自引率

4.80%

发文量

142

审稿时长

>12 weeks

期刊介绍： he Journal of Computational Electronics brings together research on all aspects of modeling and simulation of modern electronics. This includes optical, electronic, mechanical, and quantum mechanical aspects, as well as research on the underlying mathematical algorithms and computational details. The related areas of energy conversion/storage and of molecular and biological systems, in which the thrust is on the charge transport, electronic, mechanical, and optical properties, are also covered. In particular, we encourage manuscripts dealing with device simulation; with optical and optoelectronic systems and photonics; with energy storage (e.g. batteries, fuel cells) and harvesting (e.g. photovoltaic), with simulation of circuits, VLSI layout, logic and architecture (based on, for example, CMOS devices, quantum-cellular automata, QBITs, or single-electron transistors); with electromagnetic simulations (such as microwave electronics and components); or with molecular and biological systems. However, in all these cases, the submitted manuscripts should explicitly address the electronic properties of the relevant systems, materials, or devices and/or present novel contributions to the physical models, computational strategies, or numerical algorithms.