Comparative studies of the optical absorption coefficient spectra in the implanted layers in silicon with the use of nondestructive spectroscopic techniques

IF 1 4区工程技术 Q4 INSTRUMENTS & INSTRUMENTATION

Metrology and Measurement Systems Pub Date : 2023-07-20 DOI:10.24425/mms.2020.132778

K. Dorywalski, Ł. Chrobak, M. Malinski

引用次数: 7

Abstract

Thisworkpresentsresultsofcomparativestudiesoftheopticalabsorptioncoeﬃcientspectraofionimplantedlayersinsilicon.Threenondestructiveandnoncontacttechniqueswereusedforthispurpose:spectroscopicellipsometry(SE),modulatedfreecarriersabsorption(MFCA)andthephotothermalradiometry(PTR).ResultsobtainedwiththeellipsometricmethodaretheproofofcorrectnessoftheresultsobtainedwiththeMFCAandPTRtechniques.Thesetechniquesareusuallyusedforinvestigationsofrecombinationparametersofsemiconductors.Theyarenotusedforinvestigationsoftheopticalparametersofsemiconductors.OpticalabsorptioncoeﬃcientspectraofFe + and Ge + high energy and dose implanted layers in silicon, obtained with the three techniques, are presented and compared.

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利用无损光谱技术对硅注入层的光吸收系数光谱进行比较研究

这项工作是对种植层土壤的光学吸收系数进行比较研究的结果。为此，我们使用了三种结构和非接触技术：光谱脂酶测定法（SE）、调制自由载流子吸收法（MFCA）和光热辐射测定法（PTR）。用这些方法获得的结果是MFCA和PTR技术保持结果正确性的基础。这些技术通常用于研究半导体的组合参数。这是对半导体光学参数的研究所必需的。介绍并比较了用这三种技术在硅中获得的Fe+和Ge+高能和剂量注入层的光学吸收光谱。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Metrology and Measurement Systems INSTRUMENTS & INSTRUMENTATION-

CiteScore

2.00

自引率

10.00%

发文量

审稿时长

6 months

期刊介绍： Contributions are invited on all aspects of the research, development and applications of the measurement science and technology. The list of topics covered includes: theory and general principles of measurement; measurement of physical, chemical and biological quantities; medical measurements; sensors and transducers; measurement data acquisition; measurement signal transmission; processing and data analysis; measurement systems and embedded systems; design, manufacture and evaluation of instruments. The average publication cycle is 6 months.