Modified asymmetrical 13-level inverter topology with reduce power semiconductor devices

Q2 Energy
M. S. Arif, Zeeshan Sarwer, S. Ayob, Mohd Zaid, Shahbaz Ahmad
{"title":"Modified asymmetrical 13-level inverter topology with reduce power semiconductor devices","authors":"M. S. Arif, Zeeshan Sarwer, S. Ayob, Mohd Zaid, Shahbaz Ahmad","doi":"10.11591/ijpeds.v11.i4.pp2212-2222","DOIUrl":null,"url":null,"abstract":"This paper introduces a modified multilevel inverter topology with asymmetrical dc sources combination. The significant features of the proposed circuit are the reduced number of switches and low total standing voltage (TSV). Proposed topology utilizes ten switches to produce 13 level output with per unit TSVp.u of 5.33. An additional feature of the proposed topology is the inherent negative level generation as there is no requirement of an H-bridge for the polarity reversals. Nearest level control (NLC) technique is used as the modulation strategy. Performance of the proposed topology is validated through extensive analysis using Simulink and PLECS software. Detailed circuit analysis and its power loss, as well as efficiency studies, have been carried out under constant and dynamic load conditions. Results obtained shows that the proposed topology is working well, producing an output of 13-level with total harmonic distortion of 6.36% and inverter efficiency of 98.8%. The topology is extended to n-level structure, and its generalized expressions for different parameters were formulated. The comparison of the generalized structure with other existing topology is carried out, and it is found that the proposed topology outperform other topologies on many parameters.","PeriodicalId":38280,"journal":{"name":"International Journal of Power Electronics and Drive Systems","volume":"11 1","pages":"2212-2222"},"PeriodicalIF":0.0000,"publicationDate":"2020-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Journal of Power Electronics and Drive Systems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.11591/ijpeds.v11.i4.pp2212-2222","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"Energy","Score":null,"Total":0}
引用次数: 2

Abstract

This paper introduces a modified multilevel inverter topology with asymmetrical dc sources combination. The significant features of the proposed circuit are the reduced number of switches and low total standing voltage (TSV). Proposed topology utilizes ten switches to produce 13 level output with per unit TSVp.u of 5.33. An additional feature of the proposed topology is the inherent negative level generation as there is no requirement of an H-bridge for the polarity reversals. Nearest level control (NLC) technique is used as the modulation strategy. Performance of the proposed topology is validated through extensive analysis using Simulink and PLECS software. Detailed circuit analysis and its power loss, as well as efficiency studies, have been carried out under constant and dynamic load conditions. Results obtained shows that the proposed topology is working well, producing an output of 13-level with total harmonic distortion of 6.36% and inverter efficiency of 98.8%. The topology is extended to n-level structure, and its generalized expressions for different parameters were formulated. The comparison of the generalized structure with other existing topology is carried out, and it is found that the proposed topology outperform other topologies on many parameters.
采用减小功率半导体器件的改进非对称13电平逆变器拓扑结构
本文介绍了一种改进的非对称直流电源组合多电平逆变器拓扑结构。该电路的显著特点是减少开关数量和低总电压(TSV)。所提出的拓扑结构利用10个开关以每单位TSVp产生13个电平输出。U = 5.33。所提出的拓扑结构的另一个特征是固有的负电平产生,因为极性反转不需要h桥。采用最近电平控制(NLC)技术作为调制策略。通过使用Simulink和PLECS软件进行广泛分析,验证了所提出拓扑的性能。在恒负载和动态负载条件下,进行了详细的电路分析及其功率损耗和效率研究。结果表明,所提出的拓扑结构工作良好,输出13电平,总谐波失真为6.36%,逆变器效率为98.8%。将拓扑推广到n级结构,并给出了不同参数下拓扑的广义表达式。将该拓扑与其他已有拓扑进行了比较,发现该拓扑在许多参数上都优于其他拓扑。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
International Journal of Power Electronics and Drive Systems
International Journal of Power Electronics and Drive Systems Energy-Energy Engineering and Power Technology
CiteScore
3.50
自引率
0.00%
发文量
0
期刊介绍: International Journal of Power Electronics and Drive Systems (IJPEDS) is the official publication of the Institute of Advanced Engineering and Science (IAES). The journal is open to submission from scholars and experts in the wide areas of power electronics and electrical drive systems from the global world. The scope of the journal includes all issues in the field of Power Electronics and drive systems. Included are techniques for advanced power semiconductor devices, control in power electronics, low and high power converters (inverters, converters, controlled and uncontrolled rectifiers), Control algorithms and techniques applied to power electronics, electromagnetic and thermal performance of electronic power converters and inverters, power quality and utility applications, renewable energy, electric machines, modelling, simulation, analysis, design and implementations of the application of power circuit components (power semiconductors, inductors, high frequency transformers, capacitors), EMI/EMC considerations, power devices and components, sensors, integration and packaging, applications in motor drives, wind energy systems, solar, battery chargers, UPS and hybrid systems and other applications.
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