Pyridine Vapor Annealing Induced Reversible Switching Emission and Enhanced Electroluminescent Performance of Poly(fluorene-co-dibenzothiophene-S,S-dioxide)

IF 2.1 4区材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY

Electronic Materials Letters Pub Date : 2023-06-05 DOI:10.1007/s13391-023-00442-3

Junfei Liang, Tong Wu, Jun Chen

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Abstract

In this article, we report on blue-green exciplex emission through pyridine solvent vapor annealing blue-light polymer PFSO10, which is comprised the strong electron-withdrawing dibenzo-thiophene-S,S-dioxide with the molar ratio of 10%. The photoluminescent spectrum of PFSO10 film emerged a fresh low-energy emission peaked at 482 nm after pyridine solvent vapor annealing, which was stemmed from the exciplex charge-transfer state between the PFSO10 and pyridine. It is worth noting that the exciplex emission peaked at 482 nm from the pyridine solvent vapor annealing film was disappeared after thermal annealed at 120 °C and its photoluminescent spectrum was similar to that of the pristine PFSO10 film. This similar phenomenon of photoluminescent spectrum was also occurred to the electroluminescent spectra of the PFSO10 films. Furthermore, the device performance of PFSO10 was achieved significant improvement after pyridine solvent vapor annealing. With optimizing the pyridine vapor annealing process, the device based on PFSO10 as emissive layer received a maximum luminous efficiency of 6.74 cd A⁻¹ with the peak brightness of 22,364 cd m⁻², which was enlarged over 140% compared to that of 2.77 cd A⁻¹ for the pristine PFSO10. These results demonstrate that appropriate solvent vapor annealing can be a simple and effective strategy to realize the reversible switching emission and improve the device performance.

Graphical Abstract

Abstract Image

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吡啶蒸气退火诱导可逆开关发射及增强聚芴-co-二苯并噻吩- s, s -二氧化硅的电致发光性能

本文报道了通过吡啶溶剂气相退火蓝光聚合物 PFSO10 发出蓝绿色赋形体的情况，PFSO10 由摩尔比为 10% 的强电子吸收二苯并噻吩-S,S-二氧化物组成。在吡啶溶剂气相退火后，PFSO10 薄膜的光致发光光谱在 482 nm 处出现了新的低能发射峰，这源于 PFSO10 与吡啶之间的电荷转移态。值得注意的是，吡啶溶剂气相退火薄膜在 120 ℃ 热退火后，在 482 nm 处出现的簇射峰值消失了，其光致发光光谱与原始 PFSO10 薄膜的光致发光光谱相似。PFSO10 薄膜的电致发光光谱也出现了类似的光致发光光谱现象。此外，经过吡啶溶剂气相退火处理后，PFSO10 的器件性能得到了显著改善。通过优化吡啶气相退火工艺，以 PFSO10 为发射层的器件获得了 6.74 cd A-1 的最大发光效率，峰值亮度为 22,364 cd m-2，与原始 PFSO10 的 2.77 cd A-1 相比，放大了 140% 以上。这些结果表明，适当的溶剂气相退火是实现可逆开关发射和提高器件性能的一种简单而有效的策略。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Electronic Materials Letters 工程技术-材料科学：综合

CiteScore

4.70

自引率

20.80%

发文量

审稿时长

2.3 months

期刊介绍： Electronic Materials Letters is an official journal of the Korean Institute of Metals and Materials. It is a peer-reviewed international journal publishing print and online version. It covers all disciplines of research and technology in electronic materials. Emphasis is placed on science, engineering and applications of advanced materials, including electronic, magnetic, optical, organic, electrochemical, mechanical, and nanoscale materials. The aspects of synthesis and processing include thin films, nanostructures, self assembly, and bulk, all related to thermodynamics, kinetics and/or modeling.