28-nm UTBB FD-SOI vs. 22-nm Tri-Gate FinFET Review: A Designer Guide—Part II

Ali Mohsen, A. Harb, N. Deltimple, Abraham Serhane
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引用次数: 4

Abstract

This is Part II of a two-part paper that explores the 28-nm UTBB FD-SOI CMOS and the 22-nm Tri-Gate FinFET technology as the better alternatives to bulk transistors especially when the transistor’s architecture is going fully depleted and its size is becoming much smaller, 28-nm and above. Reliability tests of those alternatives are first discussed. Then, a comparison is made between the two alternative transistors comparing their physical properties, electrical properties, and their preferences in different applications.
28纳米UTBB FD-SOI与22纳米三栅极FinFET回顾:设计师指南-第二部分
这是一篇由两部分组成的论文的第二部分,该论文探讨了28纳米UTBB FD-SOI CMOS和22纳米三栅极FinFET技术作为体晶体管的更好替代品,特别是当晶体管的架构完全耗尽并且其尺寸变得更小时,28纳米及以上。首先讨论了这些备选方案的可靠性测试。然后,对两种可选晶体管进行比较,比较它们的物理特性、电学特性以及它们在不同应用中的偏好。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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