{"title":"Enhancement in Power Factor of Al-Doped Cu2Se Thermoelectric Compound Prepared by Combustion Synthesis via Spark Plasma Sintering Technique","authors":"N. Thangavel, S. Kumaran","doi":"10.1007/s13391-023-00422-7","DOIUrl":null,"url":null,"abstract":"<div><p>An attempt was made to dope the aluminium in the copper site of the Cu<sub>2</sub>Se compound via combustion synthesis during spark plasma sintering. A series of Cu<sub>2−x</sub>Al<sub>x</sub>Se (x = 0, 0.01, 0.02, 0.03) materials were prepared by combustion synthesis during spark plasma sintering and short annealing. The X-Ray diffraction reports reveal that the prepared materials like Cu<sub>2</sub>Se consist of α—Cu<sub>2</sub>Se phase, Cu<sub>1.99</sub>Al<sub>0.01</sub>Se, Cu<sub>1.98</sub>Al<sub>0.02</sub>Se consist of a mixture of α—Cu<sub>2</sub>Se and β—Cu<sub>2</sub>Se phases, and Cu<sub>1.97</sub>Al<sub>0.03</sub>Se consist of β—Cu<sub>2</sub>Se phase. The doping of aluminium enhances the electrical conductivity and power factor value. Furthermore, Al-doping causes the Al–Cu secondary phase formation and aluminium cluster, which also significantly affect the electrical properties of the compounds. The sample Cu<sub>1.98</sub>Al<sub>0.02</sub>Se exhibits a power factor of 13.73 at 700 °C, which is 23.5% higher than the pure Cu<sub>2</sub>Se sample prepared.</p><h3>Graphical Abstract</h3>\n <div><figure><div><div><picture><source><img></source></picture></div></div></figure></div>\n </div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":null,"pages":null},"PeriodicalIF":2.1000,"publicationDate":"2023-03-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Electronic Materials Letters","FirstCategoryId":"88","ListUrlMain":"https://link.springer.com/article/10.1007/s13391-023-00422-7","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
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Abstract
An attempt was made to dope the aluminium in the copper site of the Cu2Se compound via combustion synthesis during spark plasma sintering. A series of Cu2−xAlxSe (x = 0, 0.01, 0.02, 0.03) materials were prepared by combustion synthesis during spark plasma sintering and short annealing. The X-Ray diffraction reports reveal that the prepared materials like Cu2Se consist of α—Cu2Se phase, Cu1.99Al0.01Se, Cu1.98Al0.02Se consist of a mixture of α—Cu2Se and β—Cu2Se phases, and Cu1.97Al0.03Se consist of β—Cu2Se phase. The doping of aluminium enhances the electrical conductivity and power factor value. Furthermore, Al-doping causes the Al–Cu secondary phase formation and aluminium cluster, which also significantly affect the electrical properties of the compounds. The sample Cu1.98Al0.02Se exhibits a power factor of 13.73 at 700 °C, which is 23.5% higher than the pure Cu2Se sample prepared.
期刊介绍：
Electronic Materials Letters is an official journal of the Korean Institute of Metals and Materials. It is a peer-reviewed international journal publishing print and online version. It covers all disciplines of research and technology in electronic materials. Emphasis is placed on science, engineering and applications of advanced materials, including electronic, magnetic, optical, organic, electrochemical, mechanical, and nanoscale materials. The aspects of synthesis and processing include thin films, nanostructures, self assembly, and bulk, all related to thermodynamics, kinetics and/or modeling.
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