Total Ionizing Dose Effects of Si Vertical Diffused MOSFET with SiO2 and Si3N4/SiO2 Gate Dielectrics

IF 1.3 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Active and Passive Electronic Components Pub Date : 2017-10-15 DOI:10.1155/2017/9685685

Jiongjiong Mo, Xuran Zhao, Min Zhou

引用次数: 3

Abstract

The total ionizing dose irradiation effects are investigated in Si vertical diffused MOSFETs (VDMOSs) with different gate dielectrics including single SiO2 layer and double Si3N4/SiO2 layer. Radiation-induced holes trapping is greater for single SiO2 layer than for double Si3N4/SiO2 layer. Dielectric oxidation temperature dependent TID effects are also studied. Holes trapping induced negative threshold voltage shift is smaller for SiO2 at lower oxidation temperature. Gate bias during irradiation leads to different shift for different gate dielectrics. Single SiO2 layer shows the worst negative at , while double Si3N4/SiO2 shows negative shift at , positive shift at , and negligible shift at .

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具有SiO2和Si3N4/SiO2栅极电介质的Si垂直扩散MOSFET的总电离剂量效应

研究了具有不同栅极电介质（包括单SiO2层和双Si3N4/SiO2层）的硅垂直扩散MOSFET（VDMOS）的总电离剂量辐照效应。辐射诱导的空穴捕获对于单个SiO2层大于对于双Si3N4/SiO2层。还研究了介电氧化温度相关的TID效应。在较低的氧化温度下，空穴捕获引起的负阈值电压偏移对于SiO2较小。辐照过程中的栅极偏置导致不同栅极电介质的不同偏移。单层SiO2在处显示出最差的负迁移，而双层Si3N4/SiO2在处显示负迁移、正迁移和可忽略的迁移。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Active and Passive Electronic Components ENGINEERING, ELECTRICAL & ELECTRONIC-

CiteScore

1.30

自引率

0.00%

发文量

审稿时长

13 weeks

期刊介绍： Active and Passive Electronic Components is an international journal devoted to the science and technology of all types of electronic components. The journal publishes experimental and theoretical papers on topics such as transistors, hybrid circuits, integrated circuits, MicroElectroMechanical Systems (MEMS), sensors, high frequency devices and circuits, power devices and circuits, non-volatile memory technologies such as ferroelectric and phase transition memories, and nano electronics devices and circuits.

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