Semianalytical Modelling and 2D Numerical Simulation of Low-Frequency Noise in Advanced N-Channel FDSOI MOSFETs

IF 1.3 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Active and Passive Electronic Components Pub Date : 2020-12-02 DOI:10.1155/2020/7989238

T. Boutchacha, G. Ghibaudo

{"title":"Semianalytical Modelling and 2D Numerical Simulation of Low-Frequency Noise in Advanced N-Channel FDSOI MOSFETs","authors":"T. Boutchacha, G. Ghibaudo","doi":"10.1155/2020/7989238","DOIUrl":null,"url":null,"abstract":"Thorough investigations of the low-frequency noise (LFN) in a fully depleted silicon-on-insulator technology node have been accomplished, pointing out on the contribution of the buried oxide (BOX) and the Si-BOX interface to the total drain current noise level. A new analytical multilayer gate stack flat-band voltage fluctuation-based model has been established, and 2D numerical simulations have been carried out to identify the main noise sources and related parameters on which the LFN depends. The increase of the noise at strong inversion could be explained by the access resistance contribution to the 1/f noise. Therefore, considering uncorrelated noise sources in the channel and in the source/drain regions, the total low-frequency noise can simply be obtained by adding to the channel noise the contribution of the excess noise originating from the access region (Δr). Moreover, only two fit parameters are used in this work: the trap volumetric density in the BOX, and the 1/f access noise level originating from the access series resistance, which is assumed to be the same for the front and the back interfaces.","PeriodicalId":43355,"journal":{"name":"Active and Passive Electronic Components","volume":null,"pages":null},"PeriodicalIF":1.3000,"publicationDate":"2020-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Active and Passive Electronic Components","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1155/2020/7989238","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

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Abstract

Thorough investigations of the low-frequency noise (LFN) in a fully depleted silicon-on-insulator technology node have been accomplished, pointing out on the contribution of the buried oxide (BOX) and the Si-BOX interface to the total drain current noise level. A new analytical multilayer gate stack flat-band voltage fluctuation-based model has been established, and 2D numerical simulations have been carried out to identify the main noise sources and related parameters on which the LFN depends. The increase of the noise at strong inversion could be explained by the access resistance contribution to the 1/f noise. Therefore, considering uncorrelated noise sources in the channel and in the source/drain regions, the total low-frequency noise can simply be obtained by adding to the channel noise the contribution of the excess noise originating from the access region (Δr). Moreover, only two fit parameters are used in this work: the trap volumetric density in the BOX, and the 1/f access noise level originating from the access series resistance, which is assumed to be the same for the front and the back interfaces.

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先进n沟道FDSOI mosfet低频噪声的半解析建模和二维数值模拟

对完全耗尽的绝缘体上硅技术节点中的低频噪声（LFN）进行了深入的研究，指出了掩埋氧化物（BOX）和Si-BOX界面对总漏极电流噪声水平的贡献。建立了一个新的基于多层栅堆叠平带电压波动的分析模型，并进行了二维数值模拟，以确定LFN所依赖的主要噪声源和相关参数。强反转时噪声的增加可以通过访问电阻对1/f噪声的贡献来解释。因此，考虑到沟道和源极/漏极区域中的不相关噪声源，可以通过将源于存取区域的过量噪声的贡献（Δr）添加到沟道噪声中来简单地获得总低频噪声。此外，在这项工作中只使用了两个拟合参数：BOX中的陷阱体积密度，以及源于接入串联电阻的1/f接入噪声水平，假设该噪声水平对于正面和背面接口是相同的。

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来源期刊

Active and Passive Electronic Components ENGINEERING, ELECTRICAL & ELECTRONIC-

CiteScore

1.30

自引率

0.00%

发文量

审稿时长

13 weeks

期刊介绍： Active and Passive Electronic Components is an international journal devoted to the science and technology of all types of electronic components. The journal publishes experimental and theoretical papers on topics such as transistors, hybrid circuits, integrated circuits, MicroElectroMechanical Systems (MEMS), sensors, high frequency devices and circuits, power devices and circuits, non-volatile memory technologies such as ferroelectric and phase transition memories, and nano electronics devices and circuits.

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