Geometric effects on carrier collection in core–shell nanowire p–n junctions

IF 2.5 4区 材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY
Mingze Yang, A. Darbandi, S. Watkins, K. Kavanagh
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引用次数: 0

Abstract

We report electron-beam-induced current (EBIC) microscopy carried out on free-standing GaAs nanowire core–shell, p–n tunnel junctions. The carrier kinetics in both the n-type core and the p-type shell were determined by analyzing radial EBIC profiles as a function of beam energy. These profiles are highly sensitive to geometric effects such as facet width, shell and core thicknesses, and depletion widths. Combined with Monte Carlo simulations, they permitted measurement of the minority carrier diffusion lengths in the core and the shell, as well as the depletion widths as a function of radial direction. The relatively short minority carrier diffusion length in the core (50 nm), can be attributed to bulk point defects originating from low-temperature core growth (400 ∘C), or to interfacial recombination at traps at the p–n junction.
核壳纳米线p–n结中载流子收集的几何效应
我们报道了在独立的GaAs纳米线核-壳,p–n隧道结上进行的电子束感应电流(EBIC)显微镜。通过分析作为束能量函数的径向EBIC分布来确定n型核和p型壳中的载流子动力学。这些轮廓对几何效应高度敏感,例如刻面宽度、壳和芯厚度以及耗尽宽度。结合蒙特卡罗模拟,他们允许测量核心和外壳中的少数载流子扩散长度,以及作为径向函数的耗尽宽度。核心中相对较短的少数载流子扩散长度(50 nm)可归因于源自低温核心生长(400∘C)的体点缺陷,或归因于p–n结处陷阱处的界面复合。
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来源期刊
Nano Futures
Nano Futures Chemistry-General Chemistry
CiteScore
4.30
自引率
0.00%
发文量
35
期刊介绍: Nano Futures mission is to reflect the diverse and multidisciplinary field of nanoscience and nanotechnology that now brings together researchers from across physics, chemistry, biomedicine, materials science, engineering and industry.
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