Reliability challenges in CMOS technology: A manufacturing process perspective

IF 2.6 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Qiao Teng , Yongkang Hu , Ran Cheng , Yongyu Wu , Guodong Zhou , Dawei Gao
{"title":"Reliability challenges in CMOS technology: A manufacturing process perspective","authors":"Qiao Teng ,&nbsp;Yongkang Hu ,&nbsp;Ran Cheng ,&nbsp;Yongyu Wu ,&nbsp;Guodong Zhou ,&nbsp;Dawei Gao","doi":"10.1016/j.mee.2023.112086","DOIUrl":null,"url":null,"abstract":"<div><p><span>With the development of automotive electronics, the characteristics of device reliability have received widespread attention. The improvement of device reliability primarily depends on the manufacturing process's quality. This work reviews the inherent relationship between </span>manufacturing processes and reliability with a detailed introduction to the components and failure indices of wafer-level reliability testing. Furthermore, it focuses on the complementary metal-oxide-semiconductor (CMOS) manufacturing process and how device reliability can be enhanced through optimization in front-end-of-line and back-end-of-line processes. Reliability serves as a crucial indicator of device quality, and further efforts are required to achieve higher reliability through process optimization.</p></div>","PeriodicalId":18557,"journal":{"name":"Microelectronic Engineering","volume":null,"pages":null},"PeriodicalIF":2.6000,"publicationDate":"2023-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Microelectronic Engineering","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S016793172300151X","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

Abstract

With the development of automotive electronics, the characteristics of device reliability have received widespread attention. The improvement of device reliability primarily depends on the manufacturing process's quality. This work reviews the inherent relationship between manufacturing processes and reliability with a detailed introduction to the components and failure indices of wafer-level reliability testing. Furthermore, it focuses on the complementary metal-oxide-semiconductor (CMOS) manufacturing process and how device reliability can be enhanced through optimization in front-end-of-line and back-end-of-line processes. Reliability serves as a crucial indicator of device quality, and further efforts are required to achieve higher reliability through process optimization.

CMOS技术的可靠性挑战:制造工艺视角
随着汽车电子技术的发展,器件可靠性的特点受到了广泛的关注。器件可靠性的提高主要取决于制造工艺的质量。本文回顾了制造工艺与可靠性之间的内在关系,并详细介绍了晶圆级可靠性测试的组件和失效指标。此外,它还着重于互补金属氧化物半导体(CMOS)制造工艺,以及如何通过优化前端和后端工艺来提高器件的可靠性。可靠性是设备质量的重要指标,需要进一步通过工艺优化实现更高的可靠性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
Microelectronic Engineering
Microelectronic Engineering 工程技术-工程:电子与电气
CiteScore
5.30
自引率
4.30%
发文量
131
审稿时长
29 days
期刊介绍: Microelectronic Engineering is the premier nanoprocessing, and nanotechnology journal focusing on fabrication of electronic, photonic, bioelectronic, electromechanic and fluidic devices and systems, and their applications in the broad areas of electronics, photonics, energy, life sciences, and environment. It covers also the expanding interdisciplinary field of "more than Moore" and "beyond Moore" integrated nanoelectronics / photonics and micro-/nano-/bio-systems. Through its unique mixture of peer-reviewed articles, reviews, accelerated publications, short and Technical notes, and the latest research news on key developments, Microelectronic Engineering provides comprehensive coverage of this exciting, interdisciplinary and dynamic new field for researchers in academia and professionals in industry.
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