Integrated Electromagnetic Device with On-Off Heterointerface for Intelligent Switching Between Wave-Absorption and Wave-Transmission

IF 18.5 1区材料科学 Q1 CHEMISTRY, MULTIDISCIPLINARY

Advanced Functional Materials Pub Date : 2023-07-20 DOI:10.1002/adfm.202306599

Fei Pan, Ke Pei, Gang Chen, Hongtao Guo, Haojie Jiang, Renchao Che, Wei Lu

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引用次数: 3

Abstract

Intelligent electromagnetic wave absorbers (IEAs) are in high demand due to their dynamic electromagnetic parameters that can adapt to the complex and volatile application environments of the current 5G era. Despite of this, there is currently a lack of research on the convertible electromagnetic wave (EMW) absorption mode (switching between wave-absorption and wave-transmission) and their integrated design with external physical stimulations, so that the electromagnetic device will realize intelligent switching in any conditions. In this work, a V₂C-VO₂(M) heterostructure that exhibits a reversible metal–insulator transition at the temperature of 62 °C is fabricated via oxidation of MXene. The heterostructures demonstrate near wave-transmission characteristics at 25 °C while wave-absorption behavior with wide effective absorption bandwidth (4.04 GHz) at 70 °C. VO₂(M) exhibits stronger intrinsic conductivity after phase transition, and the “on-off” heterostructure between V₂C and VO₂ lead to poor/strong local conductive network and interfacial polarization in 25/70 °C, thus creating “quantized” dielectric loss. Furthermore, a multilayered electromagnetic functional device is developed to facilitate the absorber's phase transition temperature at a voltage of 17.5 V. This work presents promising opportunities of the V₂C-VO₂(M) heterostructure for various applications, including radar stealth, portable stealth suits, signal regulation, and deicing.

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具有开-关异质接口的集成电磁器件，用于在波吸收和波传输之间进行智能切换

智能电磁波吸收器(IEAs)具有动态的电磁参数，能够适应当前5G时代复杂多变的应用环境，因此需求很大。尽管如此，目前缺乏可转换电磁波(EMW)吸收模式(在吸波和透射之间切换)及其与外界物理刺激集成设计的研究，使电磁设备在任何条件下都能实现智能切换。在这项工作中，通过氧化MXene制备了在62℃温度下表现出可逆金属-绝缘体转变的V2C-VO2(M)异质结构。在25°C时，异质结构表现出近波传输特性;在70°C时，异质结构表现出较宽的有效吸收带宽(4.04 GHz)。相变后VO2(M)表现出更强的本征电导率，在25/70℃时，V2C与VO2之间的“通断”异质结构导致局部导电网络弱/强，界面极化，从而产生“量子化”介电损耗。此外，开发了多层电磁功能器件，以促进吸收器在17.5 V电压下的相变温度。这项工作为V2C-VO2(M)异质结构的各种应用提供了有希望的机会，包括雷达隐身，便携式隐身服，信号调节和除冰。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Advanced Functional Materials 工程技术-材料科学：综合

CiteScore

29.50

自引率

4.20%

发文量

2086

审稿时长

2.1 months

期刊介绍： Firmly established as a top-tier materials science journal, Advanced Functional Materials reports breakthrough research in all aspects of materials science, including nanotechnology, chemistry, physics, and biology every week. Advanced Functional Materials is known for its rapid and fair peer review, quality content, and high impact, making it the first choice of the international materials science community.