Yu Liu, Ping-An Chen, Xincan Qiu, Jing Guo, Jiangnan Xia, Huan Wei, Haihong Xie, Shijin Hou, Mai He, Xiao Wang, Z. Zeng, Lang Jiang, Lei Liao, Yuanyuan Hu
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引用次数: 10
Abstract
Doping is an important technique for semiconductor materials and devices, yet effective and controllable doping of organic-inorganic halide perovskites is still a challenge. Here, we demonstrate a facile way to dope 2D Sn-based perovskite (PEA)2SnI4 by incorporating SnI4 in the precursor solutions. It is observed that Sn4+ produces p-doping effect on the perovskite, which increases the electrical conductivity by 105 times. This doping technique allows us to improve the mobility of (PEA)2SnI4 field-effect transistors from 0.25 to 0.68 cm2 V−1 s−1. This solution-processed doping technique is promising for flexible and high-performance devices.
期刊介绍:
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