Few layer chemical vapor deposited two dimensional WS2 for low voltage resistive switching application

IF 2.6 4区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronic Engineering Pub Date : 2023-09-15 DOI:10.1016/j.mee.2023.112083

Awais Khalid , Pervaiz Ahmad , Ahmad M. Saeedi , Iram Liaqat , N.S. Abd EL-Gawaad , Sahar Ahmed Idris , Abdulaziz M. Alanazi , Amal H. Alsehli , Marwah M. Alsowayigh , Suliman A. Alderhami

{"title":"Few layer chemical vapor deposited two dimensional WS2 for low voltage resistive switching application","authors":"Awais Khalid , Pervaiz Ahmad , Ahmad M. Saeedi , Iram Liaqat , N.S. Abd EL-Gawaad , Sahar Ahmed Idris , Abdulaziz M. Alanazi , Amal H. Alsehli , Marwah M. Alsowayigh , Suliman A. Alderhami","doi":"10.1016/j.mee.2023.112083","DOIUrl":null,"url":null,"abstract":"<div>Optimizing the fabrication method gives rise to control over the deposition of WS2 sheets in a CVD chamber. The deposition was executed on Pt-coated silicon substrate so that electrical behavior of the WS2 domains could be observed. Utilizing two types of electrode material helped in understanding the role of metal diffusion mediated switching failure. The Au/WS2/Pt/Ti/SiO2/Si device exhibited resistive switching characteristics at very low operating voltages. A high on/off ratio (>104), high retention time (104 s), and a long endurance (1500 cycles) were respectively recorded to establish the non-volatile memory characteristics in a device with thin layer of WS2. The switching mechanism was established by performing conducting atomic force microscopy. This work also explained the mechanism of resistance switching in CVD grown tungsten disulfide in two steps and pave the way for the development of large-scale devices.</div>","PeriodicalId":18557,"journal":{"name":"Microelectronic Engineering","volume":null,"pages":null},"PeriodicalIF":2.6000,"publicationDate":"2023-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Microelectronic Engineering","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S016793172300148X","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

Abstract

Optimizing the fabrication method gives rise to control over the deposition of WS₂ sheets in a CVD chamber. The deposition was executed on Pt-coated silicon substrate so that electrical behavior of the WS₂ domains could be observed. Utilizing two types of electrode material helped in understanding the role of metal diffusion mediated switching failure. The Au/WS₂/Pt/Ti/SiO₂/Si device exhibited resistive switching characteristics at very low operating voltages. A high on/off ratio (>10⁴), high retention time (10⁴ s), and a long endurance (1500 cycles) were respectively recorded to establish the non-volatile memory characteristics in a device with thin layer of WS₂. The switching mechanism was established by performing conducting atomic force microscopy. This work also explained the mechanism of resistance switching in CVD grown tungsten disulfide in two steps and pave the way for the development of large-scale devices.

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少量化学气相沉积二维WS2用于低压电阻开关

优化制造方法可以控制在气相沉积室中WS2片的沉积。在pt涂层的硅衬底上进行沉积，以便观察WS2畴的电学行为。利用两种类型的电极材料有助于理解金属扩散介导的开关故障的作用。Au/WS2/Pt/Ti/SiO2/Si器件在非常低的工作电压下具有电阻开关特性。在具有WS2薄层的器件中，分别记录了高开/关比(>104)、高保持时间(104 s)和长续航时间(1500次)，从而建立了非易失性存储特性。通过导电原子力显微镜建立了开关机制。本工作还解释了CVD生长的二硫化钨两步电阻开关的机理，为大规模器件的开发奠定了基础。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Microelectronic Engineering 工程技术-工程：电子与电气

CiteScore

5.30

自引率

4.30%

发文量

131

审稿时长

29 days

期刊介绍： Microelectronic Engineering is the premier nanoprocessing, and nanotechnology journal focusing on fabrication of electronic, photonic, bioelectronic, electromechanic and fluidic devices and systems, and their applications in the broad areas of electronics, photonics, energy, life sciences, and environment. It covers also the expanding interdisciplinary field of "more than Moore" and "beyond Moore" integrated nanoelectronics / photonics and micro-/nano-/bio-systems. Through its unique mixture of peer-reviewed articles, reviews, accelerated publications, short and Technical notes, and the latest research news on key developments, Microelectronic Engineering provides comprehensive coverage of this exciting, interdisciplinary and dynamic new field for researchers in academia and professionals in industry.